SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The GBU802HD2G is a single-phase bridge rectifier manufactured by Taiwan Semiconductor Corporation. It utilizes silicon technology and features a GBU-4 through-hole mounting package. The device supports an average forward current of 8 A with a peak reverse voltage rating of 200 V. Key electrical parameters include a maximum forward voltage of 1.1 V and a non-repetitive peak surge current capacity of 200 A. The component operates within a junction temperature range from -55 °C to +150 °C. Physical dimensions are specified as 22.3 mm in length, 18.8 mm in height, and 3.56 mm in width.
Verify the specific ordering suffix against official manufacturer documentation to confirm exact specifications. Ensure compliance with RoHS directives if required by the application. Cross-reference datasheet revisions to validate parameter consistency before procurement.
Select this component when an 8 A current rating and 200 V blocking voltage are required in a GBU-4 package. Evaluate thermal management requirements based on the 150 °C maximum junction temperature limit. Confirm that the 1.1 V forward voltage drop aligns with system efficiency targets.
This part belongs to the GBU series of general-purpose bridge rectifiers from Taiwan Semiconductor. The series offers various voltage ratings while maintaining consistent current handling and mechanical footprint characteristics for design flexibility across different power conversion applications.
Direct substitutes must match the 8 A current, 200 V voltage, and GBU-4 package constraints. Verify pinout compatibility and thermal performance equivalence before substitution.