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The GBU807-K is an 8A standard bridge rectifier from Taiwan Semiconductor, rated for a repetitive peak reverse voltage of 1000V. It utilizes a GBU package with a quad configuration and supports junction temperatures up to 150°C. The device features a typical forward voltage of 1.1V at 8A and a maximum surge current capability of 200A. Electrical characteristics include a typical reverse leakage current of 5µA at 25°C and a junction capacitance of 94pF per diode. Thermal resistance values are specified as 21°C/W (junction-to-ambient) and 2°C/W (junction-to-case).
Verify the specific ordering code matches the required voltage rating within the GBU8x-K series. Confirm packaging details align with project requirements, as the standard packing format is 20 units per tube. Ensure compliance with RoHS and halogen-free standards if mandated by the target application environment.
Select this component when a high-voltage 1000V rating is necessary alongside an 8A continuous current capacity. The GBU package provides robust mechanical stability for PCB mounting. Consider the thermal resistance parameters for heat dissipation planning in enclosed designs requiring operation near the maximum junction temperature limit.
This part belongs to the GBU804-K through GBU807-K series manufactured by Taiwan Semiconductor. The series covers voltage ratings from 400V to 1000V while maintaining a consistent 8A current handling capability across all variants. The suffix 'K' denotes the specific product line configuration.
Direct substitutes must match the 8A current rating, 1000V reverse voltage, and GBU package footprint. Verify that alternative components meet the same UL recognition file E-326243 and maintain comparable thermal performance metrics.
The maximum surge peak forward current is 200A for an 8.3ms single half sine-wave superimposed on rated load.
The GBU804-K has a typical junction capacitance of 211pF, whereas the GBU805-K, GBU806-K, and GBU807-K share a typical value of 94pF.
At a junction temperature of 125°C, the typical reverse current increases to 500µA per diode.