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The GBU8K-E3/51 is a single-phase bridge rectifier manufactured by Vishay General Semiconductor - Diodes Division. It utilizes glass-passivated silicon junctions and is housed in the GBU plastic package with four pins for through-hole mounting. The device supports an average forward rectified current of 8 A and withstands a peak repetitive reverse voltage of 800 V. Key electrical parameters include a maximum non-repetitive peak forward surge current of 200 A, a peak forward voltage of 1 V, and a reverse leakage current of 5 µA at 600 V. It operates within a temperature range of -55 °C to +150 °C TJ.
Verify the specific suffix against official Vishay documentation to confirm exact ratings and compliance status. Confirm RoHS and REACH alignment with project requirements. Ensure the GBU package dimensions match the target PCB footprint. Validate thermal management strategies for the specified operating temperature range.
Select this component when an 8 A current rating and 800 V blocking capability are required in a standard GBU form factor. Consider the 150 °C junction temperature limit for high-temperature environments. Compare alternative Vishay series if different current or voltage specifications are needed.
This part belongs to the Vishay GBU8 series of single-phase bridge rectifiers. The series offers various voltage ratings while maintaining consistent 8 A current handling and GBU packaging. It serves as a standard solution for general-purpose rectification applications requiring robust performance.
GBU8K-E3/45
The maximum operating junction temperature is +150 °C.
The device uses glass passivation for its silicon junctions.