GC4801-14

RF Diode Overview

The GC4801-14 is a silicon PIN diode manufactured by Microchip Technology, designed for high-frequency applications up to 24 GHz. It features a non-hermetic beam lead configuration with a maximum reverse voltage of 100 V and a low maximum diode capacitance of 20 fF. The device supports a forward current of 50 mA with a forward voltage of 1 V and a maximum series resistance of 4 Ohms at mid-frequency. Operating temperatures range from -55°C to +150°C, with a carrier lifetime of 150 ns and a reverse current of 500 nA.

RF Diode Feature Summary

• High-frequency operation capability up to 24 GHz
• Low capacitance design for signal integrity
• Wide thermal operating range suitable for harsh environments

RF Diode Applications

• Microwave switching circuits
• Attenuator designs
• RF phase shifters

RF Diode Procurement Notes

Verify availability directly with the manufacturer or authorized distributors, as this component may be subject to limited supply or factory special order status. Confirm RoHS compliance details and specific packaging requirements before finalizing procurement plans.

RF Diode Selection Notes

Select this component when low capacitance and high-speed switching are required in microwave frequencies. Ensure the circuit design accommodates the 100 V reverse voltage rating and the specified thermal limits between -55°C and +150°C for reliable performance.

RF Diode Part Context

This part belongs to Microchip's planar beamlead PIN diode family, specifically engineered for RF and microwave applications. The beam lead package facilitates surface mount installation, offering a compact solution for high-frequency signal processing tasks within electronic systems.

RF Diode Replacement Considerations

The GC4802-14 is a related variant within the same product line. Verify electrical parameter compatibility, particularly regarding capacitance and frequency response, before substituting.