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Product Detailed Parameters
- Description：SIC 1200V 20M MOSFET SOT-227
- Series：-
- Mfr：SemiQ
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：113A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：20V
- Rds On (Max) @ Id, Vgs：28mOhm @ 50A, 20V
- Vgs(th) (Max) @ Id：4V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs：216 nC @ 20 V
- Vgs (Max)：+25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds：5349 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：395W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Supplier Device Package：SOT-227
- Package / Case：SOT-227-4, miniBLOC
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Overview
The SemiQ GCMX020B120S1-E1 is a Silicon Carbide (SiC) MOSFET module featuring a single N-Channel configuration. It offers a drain-source breakdown voltage of 1200V and a continuous drain current of 113A at case temperature. The device exhibits a maximum on-resistance of 20mΩ. Key switching parameters include an 8ns rise time and an 18ns fall time. It supports gate-source voltages from -5V to +20V with a threshold voltage of approximately 1.8V. The module is designed for chassis mounting in the SOT-227 package, operating within a junction temperature range of -40°C to +175°C.
Feature Summary
- Utilizes high-speed Silicon Carbide technology for efficient power conversion
- Incorporates Kelvin reference connections to ensure stable gate drive operation
- Designed for simple driving requirements with robust thermal performance
Applications
- Electric vehicle charging systems
- Induction heating equipment
- Industrial power supplies
Procurement Notes
Verify the specific suffix E1 against official datasheets to confirm pinout and electrical tolerances. Confirm chassis mounting requirements and thermal interface specifications before integration. Ensure gate drive circuits support the specified voltage limits. Validate that the SOT-227 package dimensions match the target PCB or heatsink design constraints.
Selection Notes
Select this component for applications requiring high-voltage handling and low conduction losses. The 1200V rating suits medium-voltage inverters and converters. Consider the 113A current capacity relative to thermal management capabilities. The single-chip topology simplifies circuit design compared to multi-module alternatives. Evaluate switching speeds against electromagnetic interference requirements.
Part Context
This part belongs to the SemiQ Gen3 SiC MOSFET portfolio. It represents an evolution in wide-bandgap semiconductor modules. The series focuses on improving efficiency and power density. It targets modern power electronics demanding higher temperatures and frequencies.
Replacement Considerations
Direct substitutes require matching 1200V rating, similar Rds(on), and compatible SOT-227 footprint. Verify pin compatibility and thermal characteristics. Cross-reference with other SemiQ single-channel modules in the same package family.
