Memory IC GD25B128EYIGY product image

GD25B128EYIGY

$1.05
  • Description:IC FLASH 128MBIT SPI/QUAD 8WSON
  • Series:GD25B
  • Mfr:GigaDevice Semiconductor (HK) Limited
  • Package:Tray

SKU:9d8c2b981299 Category: Brand:

  
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GD25B128EYIGY is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLASH 128MBIT SPI/QUAD 8WSON. Review the specifications below when checking this part for your BOM.

Memory IC specifications for GD25B128EYIGY

  • Description:IC FLASH 128MBIT SPI/QUAD 8WSON
  • Series:GD25B
  • Mfr:GigaDevice Semiconductor (HK) Limited
  • Package:Tray
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NOR (SLC)
  • Memory Size:128Mbit
  • Memory Organization:16M x 8
  • Memory Interface:SPI - Quad I/O
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:70µs, 2.4ms
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:8-WDFN Exposed Pad
  • Supplier Device Package:8-WSON (6x8)
  • Access Time:7 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for GD25B128EYIGY

GD25B128EYIGY

Memory IC Overview

The GD25B128EYIGY is a 128 Mbit (16M-Byte) Serial NOR Flash memory device manufactured by GigaDevice. It supports Standard, Dual, and Quad SPI interfaces with a maximum clock frequency of 133 MHz. The device operates on a single power supply voltage ranging from 2.7 V to 3.6 V. It features uniform sector architecture with 4 K-Byte sectors and 32/64 K-Byte blocks. Key electrical characteristics include a typical standby current of 14 μA and deep power-down current of 1 μA. The memory organization consists of 16M pages of 256 Bytes each.

Memory IC Feature Summary

  • Supports Standard, Dual, and Quad SPI modes for flexible data transfer rates up to 532 Mbits/s in Quad I/O mode.
  • Includes software write protection mechanisms allowing top/bottom block protection and security register locking.
  • Features advanced security capabilities such as a 128-bit Unique ID and Serial Flash Discoverable Parameters (SFDP).
  • Designed for high endurance with minimum 100,000 Program/Erase cycles and 20-year data retention.

Memory IC Applications

  • Code storage for microcontrollers and system-on-chips requiring execute-in-place (XiP) operation.
  • Embedded systems needing reliable non-volatile storage for firmware and configuration data.
  • Consumer electronics and IoT devices utilizing low-power flash memory solutions.

Memory IC Procurement Notes

Verify the specific package variant, as the YIGY suffix denotes WSON-8 packaging. Confirm that the Quad Enable (QE) bit is permanently set to 1 by default for this series. Ensure compatibility with the required voltage range of 2.7V to 3.6V. Check for any special order requirements regarding reset pin configurations if using SOP16 or TFBGA packages, though WSON8 does not utilize this feature.

Memory IC Selection Notes

Select the GD25B128EYIGY when a 128 Mbit capacity is required with high-speed Quad SPI interface support. It is suitable for applications demanding low power consumption in standby and deep power-down modes. The uniform sector architecture simplifies erase operations compared to mixed sector devices. Consider this part for designs where software-based write protection and unique device identification are necessary for security.

Memory IC Part Context

The GD25B128E belongs to the GD25B series of Uniform Sector Dual and Quad Serial Flash memories. This series is designed to provide high performance and reliability for code storage applications. The GD25B128E specifically offers 128 Mbit density, supporting various package options including SOP8, USON8, WSON8, and TFBGA. It complements other densities in the family by providing a mid-range capacity solution with robust data protection features.

Memory IC Replacement Considerations

GD25B128EWIGR

GD25B128EYIGYGD25B128EYIGY
$1.05
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