GD25B256EWIGR

Memory IC Overview

The GD25B256EWIGR is a 256 Mbit NOR flash memory device manufactured by GigaDevice. It operates within a supply voltage range of 2.7 V to 3.6 V and supports SPI interface communication with a maximum clock frequency of 133 MHz. The memory organization is specified as 32 M x 8 bits. The component is housed in an 8-pin WSON package designed for surface mount technology. It functions reliably across an industrial temperature range from -40°C to +85°C.

Memory IC Feature Summary

• Supports standard Serial Peripheral Interface (SPI) protocol for data transfer
• Provides non-volatile storage capability for code execution and data retention
• Designed for compact surface-mount applications using WSON-8 packaging

Memory IC Applications

• Embedded systems requiring boot code storage
• Industrial control devices needing reliable firmware retention
• Consumer electronics utilizing small form-factor memory solutions

Memory IC Procurement Notes

Verify the exact part number against manufacturer datasheets to ensure compatibility with system voltage and interface requirements. Confirm package dimensions match PCB footprint specifications. Check for specific ordering suffixes that may indicate tape-and-reel or cut-tape packaging variations. Ensure environmental compliance documentation aligns with project regulations.

Memory IC Selection Notes

Select this component when a 256 Mbit capacity is required with SPI interface compatibility. Consider the WSON-8 package size constraints and the 2.7V to 3.6V operating voltage range. Evaluate thermal performance within the -40°C to +85°C industrial temperature limits. Compare against other GD25B series variants if different capacities or pinouts are needed.

Memory IC Part Context

This part belongs to the GD25B256E series of NOR flash memories. It shares architectural similarities with other devices in the GD25 family, such as the GD25B64EWIGR and GD25B128EWIGR, which offer lower capacities but similar interface characteristics. The series is designed for general-purpose non-volatile storage applications requiring high reliability and fast read access speeds.