GD25LB128EWIGR

Memory IC Overview

The GD25LB128EWIGR is a 128M-bit (16M x 8) Serial NOR Flash memory manufactured by GigaDevice. It supports Standard, Dual, and Quad SPI interfaces with a maximum clock frequency of 133 MHz under a 30 pF load. The device operates on a single power supply voltage ranging from 1.65 V to 2.0 V. It features uniform sector architecture with 4 KByte sectors and 32/64 KByte blocks. Key electrical characteristics include a typical standby current of 11 μA and a deep power-down current of 1 μA. The memory organization allows for page programming of up to 256 bytes.

Memory IC Feature Summary

• Supports standard, dual, and quad serial peripheral interface modes with data transfer rates up to 532 Mbits/s in Quad I/O mode.
• Includes advanced security features such as 128-bit unique identification, software write protection via block protect bits, and three 1024-byte security registers with one-time programmable lock capabilities.
• Features flexible architecture with uniform 4 KByte sectors and 32/64 KByte blocks, enabling efficient erase operations and execute-in-place functionality.
• Designed for low power consumption with typical standby current of 11 μA and deep power-down current of 1 μA, suitable for battery-powered applications.

Memory IC Applications

• Battery-powered consumer electronics requiring extended operational life
• Embedded systems utilizing execute-in-place (XiP) code execution
• IoT devices needing compact form factors and low power profiles
• Wearable technology with strict voltage and size constraints

Memory IC Procurement Notes

Verify the specific ordering suffix 'WIGR' corresponds to the WSON-8 package and tape & reel packaging configuration. Confirm that the 1.65V to 2.0V voltage range aligns with your system's power supply design. Ensure compatibility with the default Quad Enable bit setting, which is permanently set to 1 for this series. Check for moisture sensitivity level requirements during storage and handling.

Memory IC Selection Notes

Select this component when a low-voltage operation between 1.65V and 2.0V is required for the memory core. It is appropriate for designs prioritizing low standby and deep power-down currents. Consider this part for applications needing uniform sector sizes for consistent erase granularity. Verify that the host controller supports the necessary SPI modes including Quad I/O if high-speed read performance is critical.

Memory IC Part Context

The GD25LB128E belongs to GigaDevice's ultra-low power SPI NOR Flash family, specifically designed for 1.65V to 2.0V operation. This series targets applications where power efficiency is paramount, such as mobile and wearable devices. It complements other GD25 series parts that may operate at higher voltages like 2.7V or 3.6V, offering a specialized solution for low-voltage SoC integration without external level shifters.

Memory IC Replacement Considerations

GD25LE128EWIGR: Similar capacity and package but operates at 1.65V-2.0V; verify exact electrical parameter alignment.

Memory IC FAQ

Is the Quad Enable (QE) bit configurable?

No, for the GD25LB128E series, the QE bit is set to 1 by default and cannot be changed, ensuring IO2 and IO3 pins are always enabled for Quad operation.

What is the default state of the device after power-up?

Upon power-up, the device defaults to Standard/Dual/Quad SPI mode, not QPI mode. All volatile status register bits return to their default power-on states.

How does the device handle write protection?

Write protection is managed via software using Block Protect (BP4-BP0) bits in the status register, allowing protection of specific top or bottom blocks, or the entire array.