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GD25LD10CEIGR is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLSH 1MBIT SPI/DUAL I/O 8USON. Review the specifications below when checking this part for your BOM.
Memory IC specifications for GD25LD10CEIGR
- Description：IC FLSH 1MBIT SPI/DUAL I/O 8USON
- Series：-
- Mfr：GigaDevice Semiconductor (HK) Limited
- Package：Tape & Reel (TR)
- Memory Type：Non-Volatile
- Memory Format：FLASH
- Technology：FLASH - NOR
- Memory Size：1Mbit
- Memory Organization：128K x 8
- Memory Interface：SPI - Dual I/O
- Clock Frequency：50 MHz
- Write Cycle Time - Word, Page：55µs, 6ms
- Voltage - Supply：1.65V ~ 2V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：8-XFDFN Exposed Pad
- Supplier Device Package：8-USON (2x3)
- Access Time：-
- Grade：-
- Qualification：-
Memory IC datasheet and documents for GD25LD10CEIGR
Memory IC Overview
The GD25LD10CEIGR is a 1 Mbit NOR flash memory device manufactured by GigaDevice. It features a 128 k x 8 organization and operates within a supply voltage range of 1.65 V to 2 V. The component utilizes an SPI interface with a maximum clock frequency of 50 MHz and supports dual I/O modes. It is housed in an USON-8 package measuring 3x2x0.45 mm and is rated for industrial operating temperatures from -40°C to +85°C.
Memory IC Feature Summary
- Ultra-low power operation optimized for battery-powered applications
- Dual SPI interface support for enhanced data throughput
- Compact surface-mount packaging suitable for space-constrained designs
Memory IC Applications
- Battery-powered consumer electronics
- IoT devices requiring low standby current
- Wearable technology with strict power budgets
Memory IC Procurement Notes
Verify the specific suffix 'IGR' corresponds to the tape-and-reel packaging format as indicated in distributor listings. Confirm that the 1.65V to 2V voltage range aligns with your system's power rails, as this variant differs from standard 3V parts. Ensure compatibility with the USON-8 footprint during PCB layout finalization.
Memory IC Selection Notes
Select this part when ultra-low voltage operation between 1.65V and 2V is required. It is distinct from higher voltage variants like the GD25Q series which operate up to 3.6V. Consider the 50 MHz speed limit if higher performance is needed, and verify that the 1 Mbit capacity meets storage requirements without excessive overhead.
Memory IC Part Context
This component belongs to the GD25LD series, which focuses on ultra-low power consumption for portable devices. It shares the USON-8 form factor with other GigaDevice NOR flashes but is distinguished by its narrow 1.65V-2V operating window. The series targets applications where energy efficiency is prioritized over high-speed bulk data transfer capabilities found in broader voltage range products.
Memory IC Replacement Considerations
GD25LD10EEIGR offers similar specifications but may differ in active read current characteristics.
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