GD25LD10EEIGR

Memory IC Overview

The GD25LD10EEIGR is a 1 Mbit SPI NOR Flash memory device manufactured by GigaDevice. It operates within a supply voltage range of 1.65 V to 2 V and supports Dual SPI and standard SPI interfaces with a maximum clock frequency of 50 MHz. The memory organization is 128 k x 8 bits, and the active read current is typically 2 mA. The component is housed in an USON-8 surface-mount package.

Memory IC Feature Summary

• Supports Dual SPI and standard SPI interface modes for flexible system integration
• Operates on ultra-low voltage supply ranging from 1.65 V to 2 V
• Designed for low power consumption suitable for battery-powered applications

Memory IC Applications

• Battery-powered consumer electronics
• IoT devices requiring low power storage
• Wearable technology systems

Memory IC Procurement Notes

Verify the specific suffix EEIGR against official datasheets to confirm voltage and package specifications. Confirm availability status as distribution channels may indicate limited stock or regional restrictions. Ensure compatibility with 1.65 V to 2 V supply rails before procurement.

Memory IC Selection Notes

Select this component when designing systems requiring ultra-low voltage operation between 1.65 V and 2 V. It is suitable for applications needing 1 Mbit capacity with Dual SPI support. Verify that the USON-8 package fits the PCB layout constraints and that the 50 MHz speed meets data throughput requirements.

Memory IC Part Context

This part belongs to the GD25LD series of SPI NOR Flash memories designed for low-power applications. The series targets markets demanding extended battery life and compact form factors, such as IoT and wearable devices, offering reliable code storage with low voltage operation capabilities.

Memory IC Replacement Considerations

Check for other GD25LD series variants with compatible voltage ranges and pinouts. Verify if higher density options like GD25LD20 are functionally interchangeable regarding interface and voltage.