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GD25LD10EKIGR is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLASH 1MBIT SPI/DUAL 8USON. Review the specifications below when checking this part for your BOM.
Memory IC specifications for GD25LD10EKIGR
- Description：IC FLASH 1MBIT SPI/DUAL 8USON
- Series：GD25LD
- Mfr：GigaDevice Semiconductor (HK) Limited
- Package：Tape & Reel (TR)
- Memory Type：Non-Volatile
- Memory Format：FLASH
- Technology：FLASH - NOR (SLC)
- Memory Size：1Mbit
- Memory Organization：128K x 8
- Memory Interface：SPI - Dual I/O
- Clock Frequency：50 MHz
- Write Cycle Time - Word, Page：150µs, 6ms
- Voltage - Supply：1.65V ~ 2V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：8-XFDFN Exposed Pad
- Supplier Device Package：8-USON (1.5x1.5)
- Access Time：12 ns
- Grade：-
- Qualification：-
Memory IC datasheet and documents for GD25LD10EKIGR
Memory IC Overview
The GD25LD10EKIGR is a 1 Mbit NOR flash memory device manufactured by GigaDevice. It features a USON-8 surface-mount package and supports Dual SPI and standard SPI interfaces with a maximum clock frequency of 50 MHz. The memory organization is 128 k x 8 bits. It operates within a supply voltage range of 1.65 V to 2 V, with a maximum active read current of 2 mA. The component functions synchronously and is rated for an operating temperature range from -40°C to +85°C.
Memory IC Feature Summary
- Supports Dual SPI and standard SPI communication protocols
- Operates at low voltage levels between 1.65 V and 2 V
- Provides synchronous timing for data access
Memory IC Applications
- Embedded systems requiring low-power non-volatile storage
- Consumer electronics utilizing small form-factor components
- Mobile communication devices needing compact memory solutions
Memory IC Procurement Notes
Verify the specific suffix 'EKIGR' against the official manufacturer datasheet to confirm package type and tape-and-reel specifications. Ensure the design accommodates the 1.65 V to 2 V supply voltage range and USON-8 footprint. Confirm RoHS compliance status through the latest product documentation before finalizing procurement.
Memory IC Selection Notes
Select this component when a 1 Mbit capacity is required in a USON-8 package. It is suitable for applications demanding low power consumption due to its 2 V operation limit. Compare performance against the GD25WD10EKIGR if higher clock speeds or wider voltage ranges are necessary for the target system design.
Memory IC Part Context
This part belongs to the GD25L series of SPI NOR flash memories from GigaDevice. These devices are designed for cost-effective and space-constrained applications. The series typically offers uniform sector protection and supports standard serial protocols for easy integration into microcontroller-based systems.
Memory IC Replacement Considerations
GD25WD10EKIGR: Offers higher clock speed (104 MHz) and wider voltage range (up to 3.6 V).
Memory IC FAQ
What is the maximum clock frequency for the GD25LD10EKIGR?
The maximum clock frequency is 50 MHz.
Does the GD25LD10EKIGR support Quad I/O mode?
No, it supports Dual SPI and standard SPI interfaces only.
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