Memory IC GD25LE128DLIGR product image

GD25LE128DLIGR

  • Description:IC FLSH 128MBIT SPI/QUAD 21WLCSP
  • Series:-
  • Mfr:GigaDevice Semiconductor (HK) Limited
  • Package:Tape & Reel (TR)

SKU:d17132b648b5 Category: Brand:

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GD25LE128DLIGR is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLSH 128MBIT SPI/QUAD 21WLCSP. Review the specifications below when checking this part for your BOM.

Memory IC specifications for GD25LE128DLIGR

  • Description:IC FLSH 128MBIT SPI/QUAD 21WLCSP
  • Series:-
  • Mfr:GigaDevice Semiconductor (HK) Limited
  • Package:Tape & Reel (TR)
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NOR
  • Memory Size:128Mbit
  • Memory Organization:16M x 8
  • Memory Interface:SPI - Quad I/O
  • Clock Frequency:120 MHz
  • Write Cycle Time - Word, Page:2.4ms
  • Voltage - Supply:1.65V ~ 2V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:21-XFBGA, WLSCP
  • Supplier Device Package:21-WLCSP
  • Access Time:-
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for GD25LE128DLIGR

GD25LE128DLIGR

Memory IC Overview

The GD25LE128DLIGR is a 128 Mbit SPI NOR Flash memory component manufactured by GigaDevice. It operates within a supply voltage range of 1.65 V to 2 V and supports clock frequencies up to 133 MHz. The device utilizes an 8-WSON surface-mount package with dimensions of 5x6 mm. Key electrical parameters include a maximum active read current of 9 mA, a word write cycle time of 60 µs, and a page write cycle time of 2.4 ms. The operational temperature range spans from -40°C to +85°C.

Memory IC Feature Summary

  • Ultra-low power Quad SPI NOR Flash architecture designed for extended battery life in portable devices.
  • Supports standard SPI and Quad I/O modes including QPI for high-speed data access.
  • Uniform sector structure enabling consistent erase and programming operations across the memory array.

Memory IC Applications

  • Battery-powered IoT devices requiring low energy consumption
  • Wearable electronics and health monitoring systems
  • Consumer electronics with compact form factor constraints

Memory IC Procurement Notes

Verify the specific suffix 'DLI' against official manufacturer documentation to confirm pinout, package tolerance, and tape-and-reel specifications. Ensure compatibility with system voltage rails strictly within the 1.65 V to 2 V operating range. Confirm moisture sensitivity level and reflow soldering profiles align with assembly requirements before integration.

Memory IC Selection Notes

Select this component when ultra-low power consumption is critical alongside moderate performance needs. The 1.65 V to 2 V voltage range suits advanced process node SoCs. Compare against the GD25LQ series if higher clock speeds are required, or the GD25UF series for even lower voltage operation. Ensure the 8-WSON package fits the available PCB real estate.

Memory IC Part Context

This part belongs to the GD25LE series, which focuses on ultra-low power applications. It complements the broader GD25/55 portfolio that includes automotive-grade and higher density options. The series targets markets demanding small packages and long battery life, such as wearables and IoT sensors, distinguishing it from standard 3V NOR Flash families.

Memory IC Replacement Considerations

GD25LE128ESIGR: Similar capacity and voltage but uses SOP-8 package. GD25LE128EWJGR: Same WSON package but verify temperature range and suffix differences. GD25LQ128DWIGR: Higher speed (120 MHz) but different series designation; check functional compatibility.

GD25LE128DLIGRGD25LE128DLIGR

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