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GD25LE128EQIGR is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLASH 128MBIT SPI/QUAD 8USON. Review the specifications below when checking this part for your BOM.
Memory IC specifications for GD25LE128EQIGR
- Description：IC FLASH 128MBIT SPI/QUAD 8USON
- Series：GD25LE
- Mfr：GigaDevice Semiconductor (HK) Limited
- Package：Tape & Reel (TR)
- Memory Type：Non-Volatile
- Memory Format：FLASH
- Technology：FLASH - NOR (SLC)
- Memory Size：128Mbit
- Memory Organization：16M x 8
- Memory Interface：SPI - Quad I/O, QPI
- Clock Frequency：133 MHz
- Write Cycle Time - Word, Page：60µs, 2.4ms
- Voltage - Supply：1.65V ~ 2V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：8-XDFN Exposed Pad
- Supplier Device Package：8-USON (4x4)
- Access Time：6 ns
- Grade：-
- Qualification：-
Memory IC datasheet and documents for GD25LE128EQIGR
Memory IC Overview
The GD25LE128EQIGR is a 128 Mbit NOR flash memory device manufactured by GigaDevice. It utilizes an SPI interface with support for standard, dual, and quad I/O modes. The component operates within a supply voltage range of 1.65 V to 2 V and supports maximum clock frequencies up to 133 MHz. It features an active read current of 9 mA maximum and is housed in an USON-8 surface-mount package. The device is designed for industrial temperature ranges from -40°C to +85°C.
Memory IC Feature Summary
- Ultra-low power Quad SPI NOR Flash architecture optimized for battery-powered applications
- Dual power supply configuration supporting 1.8V VCC with 1.2V VIO operation
- Compact USON-8 surface mount package suitable for space-constrained designs
Memory IC Applications
- IoT devices requiring extended battery life
- Wearable electronics with compact form factors
- Consumer electronics utilizing advanced process node SoCs
Memory IC Procurement Notes
Verify the specific suffix 'EQIGR' against official datasheets to confirm the USON-8 package and voltage specifications. Ensure compatibility with system power rails operating between 1.65 V and 2 V. Confirm moisture sensitivity level (MSL) handling requirements during assembly. Validate that the 133 MHz clock frequency meets system timing constraints.
Memory IC Selection Notes
Select this component for applications demanding ultra-low power consumption in small footprints. The 1.2V VIO option suits systems with lower voltage logic interfaces. Compare against the GD25UF series if 1.2V full-voltage operation is required instead of dual-supply. Ensure the USON-8 package fits the PCB layout constraints.
Memory IC Part Context
This part belongs to the GD25LE series, which provides industry-leading low-power performance for Quad SPI NOR Flash. The series targets IoT, wearable, and consumer electronics markets where battery longevity and physical size are critical design parameters.
Memory IC Replacement Considerations
GD25LE128EWIGR offers identical electrical specifications but uses a WSON-8 package. GD25LE128ELIGR provides the same functionality in a 16-WLCSP package.
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