Memory IC GD25LE16EEIGR product image

GD25LE16EEIGR

$0.48
  • Description:IC FLASH 16MBIT SPI/QUAD 8USON
  • Series:GD25LE
  • Mfr:GigaDevice Semiconductor (HK) Limited
  • Package:Tape & Reel (TR)

SKU:24d3fe0c6379 Category: Brand:

  
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GD25LE16EEIGR is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLASH 16MBIT SPI/QUAD 8USON. Review the specifications below when checking this part for your BOM.

Memory IC specifications for GD25LE16EEIGR

  • Description:IC FLASH 16MBIT SPI/QUAD 8USON
  • Series:GD25LE
  • Mfr:GigaDevice Semiconductor (HK) Limited
  • Package:Tape & Reel (TR)
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NOR (SLC)
  • Memory Size:16Mbit
  • Memory Organization:2M x 8
  • Memory Interface:SPI - Quad I/O, QPI
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:60µs, 2.4ms
  • Voltage - Supply:1.65V ~ 2V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:8-XFDFN Exposed Pad
  • Supplier Device Package:8-USON (3x2)
  • Access Time:6 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for GD25LE16EEIGR

GD25LE16EEIGR

Memory IC Overview

The GD25LE16EEIGR is a 16M-bit (2M x 8) SPI NOR Flash memory from GigaDevice. It operates on a single power supply voltage ranging from 1.65V to 2.0V. The device supports standard, dual, and quad SPI interfaces, as well as QPI mode, with a maximum clock frequency of 133MHz. It features uniform sector architecture with 4K-byte sectors and 32/64K-byte blocks. Key electrical parameters include a typical standby current of 10μA and deep power-down current of 0.2μA. Endurance is rated for a minimum of 100,000 program/erase cycles with 20-year data retention.

Memory IC Feature Summary

  • Supports Standard, Dual, Quad SPI, and QPI modes for flexible interface options
  • Features ultra-low power consumption with 10μA standby and 0.2μA deep power-down currents
  • Includes advanced security with 128-bit unique ID and software/hardware write protection
  • Enables Execute in Place (XiP) operation with high-speed read capabilities

Memory IC Applications

  • Battery-powered consumer electronics requiring extended battery life
  • IoT devices needing compact form factors and low power
  • Wearable technology applications
  • Health monitoring systems

Memory IC Procurement Notes

Verify the specific suffix 'IGR' corresponds to the USON-8 package and -40°C to +85°C temperature range. Confirm the voltage range is strictly 1.65V to 2.0V, distinct from wider voltage variants. Ensure compatibility with host controller SPI/QPI timing requirements at 133MHz. Check for automotive grade requirements if applicable, as this part is not explicitly AEC-Q100 qualified in the provided datasheet.

Memory IC Selection Notes

Select this component when a 1.65V to 2.0V supply voltage is required, distinguishing it from 3V or wide-voltage flash parts. Choose the USON-8 package for space-constrained designs. Consider the 16M-bit density for code storage or data logging. Verify that the host system supports the necessary SPI modes (Standard/Dual/Quad/QPI) for optimal performance.

Memory IC Part Context

The GD25LE16E series is part of GigaDevice's ultra-low power SPI NOR Flash portfolio. It targets applications demanding minimal power consumption and small package sizes. The series includes various densities and packages, with the LE variant specifically optimized for low voltage operation around 1.65V to 2.0V.

Memory IC Replacement Considerations

GD25LE16EEEGR: Same capacity and interface but operates in an extended temperature range (-40°C to +125°C). GD25Q16EEIGR: Similar package and interface but requires a higher voltage supply (2.7V to 3.6V).

GD25LE16EEIGRGD25LE16EEIGR
$0.48
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