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GD25LE32E3IGR is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLASH 32MBIT SPI/QUAD 10WLCSP. Review the specifications below when checking this part for your BOM.
The GD25LE32E3IGR is a 32M-bit Serial NOR Flash memory device manufactured by GigaDevice. It supports Standard, Dual, and Quad SPI interfaces along with QPI mode. The device operates on a single power supply voltage ranging from 1.65V to 2.0V. It features a uniform sector architecture with 4K-byte sectors and 32/64K-byte blocks. The maximum clock frequency for fast read operations is 133MHz under a 30pF load. Data transfer rates reach up to 266Mbits/s in Dual I/O mode and 532Mbits/s in Quad I/O mode.
Verify the specific package variant corresponding to the suffix 'IGR' against the manufacturer's official ordering information table. Confirm that the required operating voltage range of 1.65V to 2.0V aligns with your system design constraints. Ensure compatibility with the WLCSP or USON package options listed in the datasheet before finalizing procurement specifications.
Select this component when a 32M-bit density is required with strict low-voltage operation between 1.65V and 2.0V. It is suitable for designs prioritizing high-speed data throughput via Quad I/O or QPI modes. Consider this part if hardware write protection via the WP# pin and unique device identification are necessary for security-sensitive applications.
The GD25LE32E series belongs to GigaDevice's Uniform Sector Dual and Quad Serial Flash family. This series is designed to provide high performance and reliability for various embedded applications. The LE variant specifically targets lower voltage operations compared to the standard 3V variants, making it appropriate for modern low-power consumer and industrial electronics.
Check for other GD25LE32E variants with different package suffixes if the current package is unavailable. Verify cross-compatibility with GD25Q32E series parts, noting potential differences in operating voltage ranges and interface capabilities.
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