Memory IC GD25LQ256DYIGR product image

GD25LQ256DYIGR

  • Description:IC FLASH 256MBIT SPI/QUAD 8WSON
  • Series:-
  • Mfr:GigaDevice Semiconductor (HK) Limited
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:bc0f1d03bedc Category: Brand:

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GD25LQ256DYIGR is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLASH 256MBIT SPI/QUAD 8WSON. Review the specifications below when checking this part for your BOM.

Memory IC specifications for GD25LQ256DYIGR

  • Description:IC FLASH 256MBIT SPI/QUAD 8WSON
  • Series:-
  • Mfr:GigaDevice Semiconductor (HK) Limited
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NOR
  • Memory Size:256Mbit
  • Memory Organization:32M x 8
  • Memory Interface:SPI - Quad I/O
  • Clock Frequency:120 MHz
  • Write Cycle Time - Word, Page:2.4ms
  • Voltage - Supply:1.65V ~ 2V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:8-WDFN Exposed Pad
  • Supplier Device Package:8-WSON (6x8)
  • Access Time:-
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for GD25LQ256DYIGR

GD25LQ256DYIGR

Memory IC Overview

The GD25LQ256DYIGR is a 256 Mbit NOR flash memory device manufactured by GigaDevice. It operates within a supply voltage range of 1.65 V to 2 V and supports SPI interface with a maximum clock frequency of 120 MHz. The memory organization is 32 M x 8 bits, featuring an active read current of up to 20 mA. This component is housed in an 8-WSON package measuring 8x6 mm and is rated for industrial temperature ranges from -40°C to +85°C.

Memory IC Feature Summary

  • Supports standard SPI and Quad I/O modes for flexible data transfer
  • Operates at low voltage levels suitable for power-sensitive designs
  • Includes hardware ECC and CRC functions for enhanced data integrity

Memory IC Applications

  • Industrial control systems requiring reliable code storage
  • Consumer electronics utilizing low-voltage architectures
  • IoT devices needing compact form factor memory solutions

Memory IC Procurement Notes

Verify the NRND status before integration, as this component is not recommended for new designs. Confirm that the 1.65V to 2V operating voltage aligns with your system's power rails. Ensure compatibility with the WSON-8 footprint during PCB layout. Check for updated lifecycle notices from GigaDevice regarding potential end-of-life transitions or alternative recommendations.

Memory IC Selection Notes

Select this part when a 256 Mbit capacity is required within a strict 2V power envelope. The 120 MHz speed offers efficient performance for moderate throughput needs. Consider the WSON-8 package size if board space is constrained. Verify that the industrial temperature range meets environmental requirements. Compare against higher voltage variants if system design allows for 3.3V operation.

Memory IC Part Context

This device belongs to the GD25LQ series, which targets low-voltage applications. It complements GigaDevice's broader portfolio of SPI NOR flash memories designed for diverse market segments. The series emphasizes reliability and scalability for embedded applications. It shares architectural similarities with other members of the GD25 family but differs in voltage specifications and package options.

Memory IC Replacement Considerations

Check for GD25LQ256DWIGR as a potential pin-compatible alternative with similar specifications. Review GigaDevice's official substitution guides for any newer revisions within the GD25LQ256D family. Ensure functional equivalence in voltage and interface protocols before swapping components.

GD25LQ256DYIGRGD25LQ256DYIGR

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