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GD25LR512MEYIGR is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLASH 512MBIT SPI/QUAD 8WSON. Review the specifications below when checking this part for your BOM.
The GD25LR512MEYIGR is a 512 Mbit NOR flash memory device manufactured by GigaDevice. It operates within a supply voltage range of 1.65 V to 2 V and utilizes a Serial Peripheral Interface (SPI) with a maximum clock frequency of 104 MHz. The component is housed in an 8-pin WSON package designed for surface-mount technology. It supports standard industrial operating temperatures ranging from -40°C to +85°C.
Verify the specific suffix 'GR' against official manufacturer documentation to confirm tape-and-reel packaging specifications. Ensure the design accommodates the 1.65 V to 2 V voltage window, as this differs from standard 3V parts. Confirm that the WSON-8 footprint matches the mechanical drawing provided in the datasheet before finalizing the PCB layout.
Select this part when the system requires a 512 Mbit density with a strict 2 V maximum supply voltage limit. It is appropriate for designs where the 104 MHz speed is sufficient and space constraints favor the WSON-8 package over larger alternatives. Compare against the GD25T series if higher voltage tolerance or faster speeds are required.
This component belongs to the GD25L series of SPI NOR flash memories, which are optimized for low-voltage applications. The series targets markets demanding reduced power consumption while maintaining reliable data retention. It complements the broader GD25 portfolio by offering a specific voltage profile distinct from the standard 3V variants.
The GD25LR512MF is a pin-compatible alternative within the same series. Verify if the MF suffix offers different packaging options such as SOP-16 or TFBGA24. Check if the GD25T512MEYIGR is suitable if the application can support a higher 2.7 V to 3.6 V supply voltage.
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