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GD25LX512MEBARR is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLASH. Review the specifications below when checking this part for your BOM.
Memory IC specifications for GD25LX512MEBARR
- Description：IC FLASH
- Series：-
- Mfr：GigaDevice Semiconductor (HK) Limited
- Package：Tape & Reel (TR)
- Memory Type：-
- Memory Format：FLASH
- Technology：FLASH - NOR
- Memory Size：-
- Memory Organization：-
- Memory Interface：-
- Clock Frequency：-
- Write Cycle Time - Word, Page：-
- Voltage - Supply：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Access Time：-
- Grade：-
- Qualification：-
Memory IC datasheet and documents for GD25LX512MEBARR
Memory IC Overview
The GD25LX512MEBARR is a 512 Mbit SPI NOR Flash memory device manufactured by GigaDevice. It operates within a supply voltage range of 1.65 V to 2 V and supports interface modes including DTR SPI, OPI, and standard SPI. The component achieves a maximum clock frequency of 200 MHz with synchronous timing. Designed for surface mount installation, it utilizes a reel packaging format. The device functions reliably in temperatures starting from -40 °C.
Memory IC Feature Summary
- Supports high-speed data transfer via DTR SPI and Octal Peripheral Interface (OPI) modes alongside traditional SPI protocols.
- Integrates hardware reset functionality and write protection mechanisms for system stability.
- Includes built-in Error Correction Code (ECC) algorithms and security registers with One-Time Programmable (OTP) locks.
- Features a unique identifier for device authentication and tracking.
Memory IC Applications
- Code storage for embedded systems requiring high performance
- Consumer electronics firmware repositories
- Industrial control system program memory
Memory IC Procurement Notes
Verify the specific suffix 'BARR' against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with the required 1.65 V to 2 V power domain. Confirm that the DTR/OPI interface requirements align with the host controller's capabilities before integration.
Memory IC Selection Notes
Select this component when a 512 Mbit density is required with support for advanced high-speed interfaces like OPI and DTR. It is suitable for designs needing low voltage operation between 1.65 V and 2 V. Consider the TFBGA or similar compact package if space constraints exist, and verify the industrial temperature range meets environmental standards.
Memory IC Part Context
This part belongs to the GD25LX series of SPI NOR Flash memories from GigaDevice. The series targets applications demanding high performance and security features. It complements other densities in the portfolio, offering scalable solutions for code storage in various electronic devices.
Memory IC Replacement Considerations
Check for direct substitutes within the GD25LX family with identical pinouts and electrical characteristics. Verify equivalent capacity and interface support. Consult official cross-reference lists for validated alternatives.
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