Memory IC GD25Q256EYJGR product image

GD25Q256EYJGR

$2.24
  • Description:IC FLASH 256MBIT SPI/QUAD 8WSON
  • Series:GD25Q
  • Mfr:GigaDevice Semiconductor (HK) Limited
  • Package:Tape & Reel (TR)

SKU:14927ec02219 Category: Brand:

  
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GD25Q256EYJGR is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLASH 256MBIT SPI/QUAD 8WSON. Review the specifications below when checking this part for your BOM.

Memory IC specifications for GD25Q256EYJGR

  • Description:IC FLASH 256MBIT SPI/QUAD 8WSON
  • Series:GD25Q
  • Mfr:GigaDevice Semiconductor (HK) Limited
  • Package:Tape & Reel (TR)
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NOR (SLC)
  • Memory Size:256Mbit
  • Memory Organization:32M x 8
  • Memory Interface:SPI - Quad I/O
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 105°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:8-WDFN Exposed Pad
  • Supplier Device Package:8-WSON (6x8)
  • Access Time:-
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for GD25Q256EYJGR

GD25Q256EYJGR

Memory IC Overview

The GD25Q256EYJGR is a 256M-bit (32M x 8) serial NOR flash memory manufactured by GigaDevice. It supports standard, dual, and quad SPI interfaces with a maximum clock frequency of 133 MHz. The device operates on a single power supply voltage ranging from 2.7V to 3.6V. It features uniform sector architecture with 4K-byte sectors and 32/64K-byte blocks. Key electrical characteristics include a typical standby current of 16μA and deep power-down current of 1μA. The component ensures data retention for up to 20 years and endurance of at least 100,000 program/erase cycles.

Memory IC Feature Summary

  • Supports standard, dual, and quad SPI modes for flexible data transfer rates
  • Includes advanced security features such as hardware/software write protection and unique ID
  • Features uniform sector architecture allowing flexible block and sector erasing
  • Provides low power consumption with dedicated hold and reset functions

Memory IC Applications

  • Code storage in embedded systems
  • Firmware storage for microcontrollers
  • Data logging applications
  • Configuration storage in industrial devices

Memory IC Procurement Notes

Verify the specific suffix 'YJGR' against official datasheets to confirm package type and temperature range. Ensure compatibility with system voltage levels within the 2.7V to 3.6V operating range. Check for moisture sensitivity level requirements during storage and handling. Confirm lead-free status and RoHS compliance if required by project specifications.

Memory IC Selection Notes

Select this component when high-density code storage is required in a small footprint. Consider the 133 MHz clock speed for applications needing fast read access. Evaluate the need for quad SPI support to maximize data throughput. Ensure the operating temperature range meets the environmental conditions of the target application.

Memory IC Part Context

This part belongs to the GD25Q series of serial NOR flash memories from GigaDevice. The series is designed for general-purpose non-volatile storage needs. It offers a balance of performance, reliability, and cost-effectiveness. The YJGR suffix typically denotes specific packaging and temperature grade variations within the product line.

Memory IC Replacement Considerations

GD25Q256DYIGR: Industrial temperature range (-40°C to +85°C), WSON-8 package.

Memory IC FAQ

What is the difference between Dual SPI and Quad SPI modes?

Dual SPI uses two I/O lines (IO0 and IO1) for data transfer, doubling the speed compared to standard SPI. Quad SPI uses four I/O lines (IO0, IO1, IO2, and IO3), quadrupling the data transfer rate.

How does the hardware write protection work?

Hardware write protection is enabled by pulling the WP# pin low. This locks the Block Protect bits in the status register, preventing software commands from modifying the protected memory areas.

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