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GD25WD05CEIGR is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLASH 512KBIT SPI/QUAD 8USON. Review the specifications below when checking this part for your BOM.
Memory IC specifications for GD25WD05CEIGR
- Description：IC FLASH 512KBIT SPI/QUAD 8USON
- Series：-
- Mfr：GigaDevice Semiconductor (HK) Limited
- Package：Tape & Reel (TR),Cut Tape (CT)
- Memory Type：Non-Volatile
- Memory Format：FLASH
- Technology：FLASH - NOR
- Memory Size：512Kbit
- Memory Organization：64K x 8
- Memory Interface：SPI - Quad I/O
- Clock Frequency：100 MHz
- Write Cycle Time - Word, Page：-
- Voltage - Supply：1.65V ~ 3.6V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：8-XFDFN Exposed Pad
- Supplier Device Package：8-USON (2x3)
- Access Time：-
- Grade：-
- Qualification：-
Memory IC datasheet and documents for GD25WD05CEIGR
Memory IC Overview
The GD25WD05CEIGR is a 512Kbit SPI NOR flash memory manufactured by GigaDevice. It features a wide voltage supply range of 1.65V to 3.6V and supports dual and quad I/O SPI interfaces with clock frequencies up to 100 MHz. The device offers a storage organization of 64K x 8 bits and operates within an industrial temperature range of -40°C to +85°C. It is housed in an 8-USON package measuring 3x2x0.45mm.
Memory IC Feature Summary
- Supports wide voltage operation from 1.65V to 3.6V for flexible system integration
- Enables high-speed data transfer via Dual and Quad I/O SPI modes at up to 100 MHz
- Designed for industrial environments with extended temperature stability
Memory IC Applications
- Industrial control systems requiring reliable code storage
- Consumer electronics utilizing low-voltage power supplies
- Embedded applications needing compact surface-mount memory solutions
Memory IC Procurement Notes
Verify the specific suffix 'IGR' corresponds to the tape-and-reel packaging format required for automated assembly processes. Confirm that the 1.65V minimum operating voltage aligns with the target system's power rail capabilities, as this differs from standard 3V-only variants. Ensure compatibility with the 8-USON footprint during PCB layout finalization.
Memory IC Selection Notes
Select this component when a wider voltage range including 1.8V and 3.3V rails is necessary. The Quad I/O support provides higher throughput compared to standard SPI devices. Consider the 8-USON package size for space-constrained designs. Verify that the industrial temperature rating meets the operational environment requirements.
Memory IC Part Context
This part belongs to the GD25WD series of SPI NOR flash memories. The 'W' designation typically indicates the wide voltage capability (1.65V-3.6V). It shares the same physical package and interface protocols as other members in the GD25D and GD25WD families, differing primarily in voltage tolerance and speed characteristics.
Memory IC Replacement Considerations
GD25D05CEIGR serves as a compatible alternative if the system strictly utilizes 3.3V power and does not require the lower 1.65V operating threshold.
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