Memory IC GD25WD10CTIGR product image

GD25WD10CTIGR

$0.33
  • Description:IC FLASH 1MBIT SPI/QUAD I/O 8SOP
  • Series:-
  • Mfr:GigaDevice Semiconductor (HK) Limited
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:754fbe3c1993 Category: Brand:

  
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GD25WD10CTIGR is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLASH 1MBIT SPI/QUAD I/O 8SOP. Review the specifications below when checking this part for your BOM.

Memory IC specifications for GD25WD10CTIGR

  • Description:IC FLASH 1MBIT SPI/QUAD I/O 8SOP
  • Series:-
  • Mfr:GigaDevice Semiconductor (HK) Limited
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NOR
  • Memory Size:1Mbit
  • Memory Organization:128K x 8
  • Memory Interface:SPI - Quad I/O
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.65V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Access Time:-
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for GD25WD10CTIGR

GD25WD10CTIGR

Memory IC Overview

The GD25WD10CTIGR is a 1 Mbit NOR flash memory component manufactured by GigaDevice. It features an SPI interface with a maximum clock frequency of 100 MHz and an organization of 128 k x 8 bits. The device operates within a supply voltage range of 1.65 V to 3.6 V, supporting low-voltage applications. Active read current is specified at a maximum of 20 mA. It is housed in an SOP-8 package and supports industrial temperature ranges from -40°C to +85°C.

Memory IC Feature Summary

  • Supports wide supply voltage operation starting from 1.65 V for low-power compatibility
  • Enables high-speed data access via SPI interface with 100 MHz clock capability
  • Provides non-volatile storage with 1 Mbit capacity in compact surface-mount packaging

Memory IC Applications

  • Industrial control systems requiring robust memory under varying voltage conditions
  • Embedded devices utilizing low-voltage power supplies
  • Firmware storage in consumer electronics operating within industrial temperature ranges

Memory IC Procurement Notes

Verify the specific voltage range requirements against the 1.65 V to 3.6 V specification to ensure compatibility with the target system's power rails. Confirm that the SOP-8 package dimensions align with the PCB footprint design. Check for humidity sensitivity handling procedures during assembly, as indicated by the moisture sensitivity classification. Ensure the ordering quantity meets the manufacturer's standard reel packaging multiples.

Memory IC Selection Notes

Select this component when the application demands a lower minimum operating voltage than standard 3.3 V parts, specifically down to 1.65 V. The 100 MHz speed offers performance advantages over slower variants like the GD25D10C. Consider the SOP-8 form factor for space-constrained designs. Verify that the 1 Mbit capacity suffices for the required code and data storage needs without necessitating larger density options.

Memory IC Part Context

This part belongs to the GD25WD10C series, distinguished by its wide voltage support compared to the standard GD25D10C series which typically requires higher minimum voltages. Both share similar interface protocols and physical packages but differ in electrical specifications regarding power supply tolerance. The 'W' designation indicates the wide voltage capability essential for specific low-power or variable-supply environments.

Memory IC Replacement Considerations

GD25D10CTIGR serves as a functional substitute if the system voltage remains above 2.7 V, though it lacks the 1.65 V lower bound. GD25WD10CTIG is identical in function but differs in tube packaging rather than tape and reel.

GD25WD10CTIGRGD25WD10CTIGR
$0.33
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