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GD25WD10EK6IGR is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLASH 1MBIT SPI/DUAL 8USON. Review the specifications below when checking this part for your BOM.
The GD25WD10EK6IGR is a 1 Mbit NOR flash memory device manufactured by GigaDevice. It features a USON-6 surface-mount package and supports Dual SPI and standard SPI interfaces. The component operates within a supply voltage range of 1.65 V to 3.6 V, with a maximum active read current of 6 mA. It achieves a maximum clock frequency of 104 MHz and utilizes a synchronous timing type. The memory organization is specified as 128 k x 8 with an 8-bit data bus width. The device is rated for industrial operating temperatures between -40°C and +85°C.
Verify the specific suffix 'K6' against the manufacturer's official datasheet to confirm pinout and electrical characteristics match your design requirements. Ensure the USON-6 package dimensions align with your PCB footprint constraints. Confirm RoHS compliance status through the latest documentation before finalizing procurement orders.
Select this component when a 1 Mbit capacity is sufficient for firmware storage in space-constrained designs. The low voltage operation down to 1.65 V makes it suitable for battery-powered devices. Verify that the host controller supports the required Dual SPI or standard SPI modes to utilize the specified performance levels effectively.
This part belongs to the GD25WD series of SPI NOR flash memories from GigaDevice. The series targets applications demanding high performance and low power consumption. These devices are designed to provide scalable storage solutions for various embedded systems, balancing density with physical size constraints.
Consult the official GigaDevice product selection guide for direct replacements. Verify compatibility regarding package type, voltage range, and interface speed before substituting.
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