GD2X30MPS06N

$18.48

Description：DIODE MOD SIC 650V 42A SOT-227
Series：SiC Schottky MPS™

SKU:078805a62dc3 Category: Diode Arrays Brand: GeneSiC Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

GD2X30MPS06N is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SIC 650V 42A SOT-227. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for GD2X30MPS06N

Description：DIODE MOD SIC 650V 42A SOT-227
Series：SiC Schottky MPS™
Mfr：GeneSiC Semiconductor
Package：Tube
Diode Configuration：2 Independent
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io) (per Diode)：42A (DC)
Voltage - Forward (Vf) (Max) @ If：-
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：-
Operating Temperature - Junction：-55°C ~ 175°C
Mounting Type：Chassis Mount
Package / Case：SOT-227-4, miniBLOC
Supplier Device Package：SOT-227
Grade：-
Qualification：-

Diode Arrays datasheet and documents for GD2X30MPS06N

GD2X30MPS06N

Diode Arrays Overview

The GD2X30MPS06N is a dual silicon carbide Schottky MPS diode manufactured by GeneSiC Semiconductor. It features a 650 V repetitive peak reverse voltage and a total continuous forward current of 76 A per device (38 A per leg). The component utilizes Gen4 Thin Chip Technology to achieve low forward voltage and superior Qrr/IF figure of merit. Electrical characteristics include a typical forward voltage of 1.5 V at 30 A and 25°C, with a maximum reverse current of 5 µA at 25°C. Thermal resistance from junction to case is 1.27 °C/W per leg. The device operates within a temperature range of -55°C to +175°C and is housed in an SOT-227 package.

Diode Arrays Feature Summary

Gen4 Thin Chip Technology for optimized efficiency
Zero reverse recovery current enabling fast switching
Temperature independent switching behavior
Positive temperature coefficient for safe paralleling

Diode Arrays Applications

Power Factor Correction (PFC)
Electric Vehicles and Battery Chargers
Solar Inverters
High Frequency Converters
Switched Mode Power Supply (SMPS)

Diode Arrays Procurement Notes

Verify the specific revision status against the manufacturer's latest documentation before finalizing design specifications. Confirm compliance requirements such as RoHS and REACH declarations directly with the supplier or GeneSiC representative. Ensure mounting torque specifications are strictly adhered to during assembly to maintain thermal performance and mechanical integrity.

Diode Arrays Selection Notes

Select this component for high-frequency power conversion applications requiring robust surge handling and minimal switching losses. Evaluate the thermal resistance and derating curves to ensure adequate heat dissipation for the intended operating environment. Consider the positive temperature coefficient when designing parallel configurations to prevent thermal runaway.

Diode Arrays Part Context

This part belongs to the SiC Schottky MPS series from GeneSiC Semiconductor. It is designed to replace traditional silicon rectifiers in high-efficiency power systems. The SOT-227 package provides a screw-mount solution suitable for industrial and automotive power modules.