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GD55T01GEYIGR is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLASH. Review the specifications below when checking this part for your BOM.
Memory IC specifications for GD55T01GEYIGR
- Description：IC FLASH
- Series：-
- Mfr：GigaDevice Semiconductor (HK) Limited
- Package：Tape & Reel (TR)
- Memory Type：-
- Memory Format：FLASH
- Technology：FLASH - NOR
- Memory Size：-
- Memory Organization：-
- Memory Interface：-
- Clock Frequency：-
- Write Cycle Time - Word, Page：-
- Voltage - Supply：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Access Time：-
- Grade：-
- Qualification：-
Memory IC datasheet and documents for GD55T01GEYIGR
Memory IC Overview
The GD55T01GEYIGR is a 1 Gbit NOR Flash memory device manufactured by GigaDevice. It operates within a supply voltage range of 2.7 V to 3.6 V and supports DTR/Quad SPI, QPI, and SPI interface types. The component features a maximum clock frequency of 200 MHz with synchronous timing. It is designed for surface mount installation in an 8-WSON package and functions reliably across a temperature range of -40°C to +85°C.
Memory IC Feature Summary
- Supports high-speed data transfer via DTR/Quad SPI, QPI, and standard SPI interfaces
- Provides non-volatile code storage with 1 Gbit density
- Operates with synchronous timing at frequencies up to 200 MHz
Memory IC Applications
- Embedded systems requiring fast boot-up times
- Consumer electronics firmware storage
- Industrial control system code execution
Memory IC Procurement Notes
Verify the specific suffix 'IGR' against official datasheets to confirm package dimensions and tape-and-reel specifications. Ensure compatibility with existing PCB footprints for the WSON-8 form factor. Confirm that the 2.7V to 3.6V operating voltage aligns with the target system's power rails. Check for any regional distribution restrictions or limited availability status before finalizing procurement plans.
Memory IC Selection Notes
Select this component when a 1 Gbit capacity is required alongside high-speed interface support including DTR and QPI modes. The 200 MHz clock speed suits applications demanding rapid instruction fetch rates. Verify that the 2.7V minimum voltage requirement fits the design constraints compared to lower voltage alternatives like the 1.65V variants. Ensure the industrial temperature range meets environmental requirements.
Memory IC Part Context
This part belongs to the GD55 series of SPI NOR Flash memories from GigaDevice. The series targets diverse market segments with densities ranging from 512Kb to 2Gb. These products are designed to deliver high performance and reliability for embedded applications, supporting various power supply configurations and package options to meet different design needs.
Memory IC Replacement Considerations
GD55T01GEYAGR: Similar 1 Gbit capacity but may differ in package or specific interface timing characteristics. GD55T01GEY2GR: Comparable capacity and voltage range but specified for extended temperature ranges up to +105°C.
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