GD55T02GEBARY

Memory IC Overview

The GD55T02GEBARY is a NOR flash memory component manufactured by GigaDevice. It offers a storage capacity of 1 Gbit and operates within a supply voltage range of 2.7 V to 3.6 V. The device supports DTR/Quad SPI, QPI, and SPI interface types with a maximum clock frequency of 200 MHz. Designed for surface mount installation, it functions at temperatures as low as -40 C.

Memory IC Feature Summary

• Supports high-speed synchronous data transfer via DTR/Quad SPI, QPI, and standard SPI interfaces.
• Provides reliable non-volatile code storage suitable for industrial temperature environments.

Memory IC Applications

• Industrial embedded systems requiring robust code storage
• Automotive electronics applications
• Consumer electronic devices

Memory IC Procurement Notes

Verify current availability status directly with the manufacturer or authorized distributors, as supply conditions may be restricted. Confirm that the specific package type and voltage specifications align with your system design requirements before finalizing procurement decisions.

Memory IC Selection Notes

Select this component when a 1 Gbit density is required alongside support for high-frequency DTR operations up to 200 MHz. Ensure the design accommodates the 2.7 V to 3.6 V power supply range and the specified industrial operating temperature limits.

Memory IC Part Context

This part belongs to the GigaDevice GD55 series of SPI NOR flash memories. The series targets diverse market segments including automotive and consumer electronics, offering various densities and interface options to meet different performance and reliability standards.

Memory IC Replacement Considerations

Check for equivalent parts within the GD55 family, such as GD55T01GEBARY, which shares similar interface and voltage characteristics but differs in storage capacity. Verify pin compatibility and electrical specifications before substitution.