GD55WB512MEYIGR

Memory IC Overview

The GD55WB512MEYIGR is a 512Mbit NOR Flash memory IC manufactured by GigaDevice Semiconductor (HK) Limited. It utilizes SPI Quad I/O interface with a maximum clock frequency of 104 MHz. The device features a memory organization of 64M x 8 bits and operates within a supply voltage range of 1.65 V to 2 V. It is housed in an 8-WSON (6x8) package and supports a wide operating temperature range from -40°C to +85°C.

Memory IC Feature Summary

• Non-volatile storage capability for firmware and configuration data
• High-speed serial peripheral interface support
• Compact surface-mount packaging design

Memory IC Applications

• Embedded system firmware storage
• Boot code retention
• Configuration data archiving

Memory IC Procurement Notes

Verify the specific suffix 'GR' against official datasheets to confirm tape-and-reel packaging status. Ensure compatibility with 1.65V-2V power domains. Confirm lead-free compliance and RoHS status through manufacturer documentation before integration into production workflows.

Memory IC Selection Notes

Select this component when low-voltage operation between 1.65V and 2V is required. The 8-WSON package suits space-constrained designs. Verify that the 104 MHz clock speed meets system timing requirements. Consider thermal performance within the specified -40°C to +85°C range for environmental suitability.

Memory IC Part Context

This part belongs to the GD55 series of NOR Flash memories from GigaDevice. It complements other variants like GD55LB01GEYIGR which offers higher capacity but different electrical characteristics. The series targets embedded applications requiring reliable non-volatile storage with moderate access speeds.

Memory IC FAQ

What is the maximum clock frequency?

The maximum clock frequency is 104 MHz.

What is the supply voltage range?

The device operates with a supply voltage between 1.65 V and 2 V.