Memory IC GD5F1GQ4UEYIGR product image

GD5F1GQ4UEYIGR

  • Description:IC FLASH 1GBIT SPI/QUAD 8WSON
  • Series:-
  • Mfr:GigaDevice Semiconductor (HK) Limited
  • Package:Tape & Reel (TR)

SKU:5f9fc7259c58 Category: Brand:

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GD5F1GQ4UEYIGR is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLASH 1GBIT SPI/QUAD 8WSON. Review the specifications below when checking this part for your BOM.

Memory IC specifications for GD5F1GQ4UEYIGR

  • Description:IC FLASH 1GBIT SPI/QUAD 8WSON
  • Series:-
  • Mfr:GigaDevice Semiconductor (HK) Limited
  • Package:Tape & Reel (TR)
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NAND
  • Memory Size:1Gbit
  • Memory Organization:128M x 8
  • Memory Interface:SPI - Quad I/O
  • Clock Frequency:120 MHz
  • Write Cycle Time - Word, Page:700µs
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:8-WDFN Exposed Pad
  • Supplier Device Package:8-WSON (6x8)
  • Access Time:-
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for GD5F1GQ4UEYIGR

GD5F1GQ4UEYIGR

Memory IC Overview

The GD5F1GQ4UEYIGR is a 1Gbit SPI NAND Flash memory component manufactured by GigaDevice. It features an 8-pin WSON-8(6x8) package and supports Standard, Dual, and Quad SPI interfaces with a maximum clock frequency of 120MHz. The device operates on a single power supply voltage ranging from 2.7V to 3.6V. Key performance metrics include a typical page program time of 400us and a block erase time of 3ms. It offers an endurance of 100K program/erase cycles and data retention of 10 years. The architecture includes a 2048-byte main data area plus a 128-byte spare area per page, with internal ECC options.

Memory IC Feature Summary

  • Supports Standard, Dual, and Quad SPI modes for flexible interface configurations.
  • Includes user-selectable internal ECC for error detection and correction during read operations.
  • Provides hardware and software write protection mechanisms via the WP# pin and feature registers.
  • Features an 8K-byte OTP region with programmable protection and locking capabilities.

Memory IC Applications

  • Embedded systems requiring high-density non-volatile storage
  • Firmware storage in consumer electronics
  • Data logging applications
  • Edge computing devices

Memory IC Procurement Notes

Verify the specific suffix 'UEYIGR' against the manufacturer's official datasheet to confirm the exact voltage range (2.7V-3.6V), temperature grade (-40°C to +85°C), and package type (WSON-8). Ensure compatibility with host controller SPI modes and check for any recent product change notifications or end-of-life status updates from GigaDevice before finalizing procurement plans.

Memory IC Selection Notes

Select this component when a cost-effective alternative to SPI NOR flash is needed for higher density storage. It is suitable for designs requiring low pin counts and simplified PCB layouts compared to parallel NAND. Consider the internal ECC feature if host-side error correction resources are limited. Verify that the 120MHz clock speed meets the system's throughput requirements for read and write operations.

Memory IC Part Context

This part belongs to the GigaDevice GD5F series of SPI NAND Flash memories. The series is designed to offer high reliability and scalability for embedded applications. GigaDevice utilizes mature process nodes for these products, ensuring long-term supply stability. The GD5F family supports various densities and interfaces, catering to diverse market segments including industrial and automotive applications.

Memory IC Replacement Considerations

Check the official datasheet for compatible pin-to-pin replacements within the GD5F1GQ4xFxxG family, such as different suffix variants offering alternative packages or temperature ranges. Ensure any substitute maintains the same 1Gbit density, 3.3V operating voltage, and WSON-8 footprint.

GD5F1GQ4UEYIGRGD5F1GQ4UEYIGR

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