GD5F4GM8UEB2GY

Memory IC Overview

The GD5F4GM8UEB2GY is a 4 Gbit SPI NAND flash memory component manufactured by GigaDevice. It utilizes Single-Level Cell (SLC) technology and supports DTR, Dual, and Quad SPI interfaces with a clock frequency of 133 MHz. The device features a 7 ns access time and a page write cycle time of 600 µs. It operates within a voltage range of 2.7V to 3.6V and is housed in a 24-TFBGA package measuring 6x8 mm. The storage organization is 512M x 8.

Memory IC Feature Summary

• Supports high-speed DTR, Dual, and Quad SPI interfaces for efficient data transfer
• Incorporates SLC NAND technology for reliable non-volatile data retention
• Features integrated bad block management functionality for enhanced stability

Memory IC Applications

• Embedded systems requiring high-density code storage
• Consumer electronics devices
• Automotive-grade applications meeting AEC-Q100 certification standards

Memory IC Procurement Notes

Verify the specific suffix codes against official datasheets to ensure correct package type and temperature rating compatibility. Confirm availability status as supply may be restricted. Ensure design-in compliance with RoHS directives and check for any regional shipping limitations before finalizing procurement plans.

Memory IC Selection Notes

Select this component when a 4 Gbit capacity with TFBGA packaging is required. Consider the 133 MHz interface speed for performance needs. Verify that the 2.7V to 3.6V operating voltage aligns with system power rails. Check if the industrial or automotive temperature range meets environmental requirements.

Memory IC Part Context

This part belongs to the GD5F series of SPI NAND flash memories from GigaDevice. The series offers densities ranging from 1 Gbit to 16 Gbit. These products are built on advanced process nodes to provide stability and long-term supply for embedded designs requiring robust code storage solutions.

Memory IC Replacement Considerations

GD5F4GM8UEBIGY is listed as a parameter-equivalent substitute.