Memory IC GD5F4GM8UEYIGR product image

GD5F4GM8UEYIGR

$4.46
  • Description:IC FLASH 4GBIT SPI/QUAD 8WSON
  • Series:GD5F
  • Mfr:GigaDevice Semiconductor (HK) Limited
  • Package:Tape & Reel (TR)

SKU:ba806aae1816 Category: Brand:

  
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GD5F4GM8UEYIGR is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLASH 4GBIT SPI/QUAD 8WSON. Review the specifications below when checking this part for your BOM.

Memory IC specifications for GD5F4GM8UEYIGR

  • Description:IC FLASH 4GBIT SPI/QUAD 8WSON
  • Series:GD5F
  • Mfr:GigaDevice Semiconductor (HK) Limited
  • Package:Tape & Reel (TR)
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NAND (SLC)
  • Memory Size:4Gbit
  • Memory Organization:1G x 4
  • Memory Interface:SPI - Quad I/O, DTR
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:600µs
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:8-WDFN Exposed Pad
  • Supplier Device Package:8-WSON (6x8)
  • Access Time:7 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for GD5F4GM8UEYIGR

GD5F4GM8UEYIGR

Memory IC Overview

The GD5F4GM8UEYIGR is a 4Gb SLC NAND Flash memory device manufactured by GigaDevice. It operates on a single power supply voltage ranging from 2.7V to 3.6V and utilizes an 8-lead WSON package with dimensions of 6x8mm. The component supports Standard, Dual, Quad SPI, and DTR (Double Transfer Rate) communication modes, enabling high-speed data transfer up to 133MHz. Key specifications include a page size of 2048 bytes plus 128 bytes spare area when internal ECC is enabled, a typical block erase time of 3ms, and a maximum active current of 30mA. The device features an operating temperature range of -40°C to 85°C.

Memory IC Feature Summary

  • Supports multiple SPI interface modes including Standard, Dual, Quad, and DTR for flexible data transfer rates.
  • Includes user-selectable internal ECC functionality to ensure data integrity during read and write operations.
  • Provides hardware and software write protection mechanisms, including register protection via the WP# pin.
  • Features a 2K-byte cache register to facilitate fast random reads and efficient copy-back operations.

Memory IC Applications

  • Embedded systems requiring high-density non-volatile storage
  • Boot code storage utilizing Power-on Read capabilities
  • Industrial applications demanding wide temperature operation ranges

Memory IC Procurement Notes

Verify the specific ordering suffix to confirm package type and temperature grade. Ensure the host system provides the correct voltage level (2.7V-3.6V). Confirm that unused pins such as WP# and HOLD# are properly terminated if not utilized in the design. Check for any regional distribution restrictions or lead time variations before finalizing procurement plans.

Memory IC Selection Notes

Select this part for designs needing 4Gb capacity with low pin count integration. Choose based on required interface speed; DTR mode offers highest throughput but requires specific command sequences. Consider internal ECC usage to simplify host controller logic. Verify thermal requirements against the specified operating temperature range for the intended application environment.

Memory IC Part Context

This component belongs to the GD5F4GM8 series of SPI-NAND Flash memories. It serves as a cost-effective alternative to parallel NAND and SPI-NOR flash, offering superior write performance and density. The series maintains consistent pinouts across densities to ease migration. It is designed for embedded applications where space and cost efficiency are critical constraints.

Memory IC Replacement Considerations

GD5F4GM8UEBIGY

GD5F4GM8UEYIGRGD5F4GM8UEYIGR
$4.46
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