GD5F4GM8UEYIGY

Memory IC Overview

The GD5F4GM8UEYIGY is a 4Gb SLC NAND Flash memory device manufactured by GigaDevice. It operates on a single power supply voltage ranging from 2.7V to 3.6V and supports Standard, Dual, Quad SPI, and DTR Quad I/O interfaces with clock frequencies up to 133MHz. The device utilizes an 8-lead WSON package (6x8mm) and functions within a temperature range of -40°C to +85°C. Key specifications include a page size of 2048 bytes plus 64 or 128 bytes spare area depending on ECC configuration, typical page program time of 320us, block erase time of 3ms, and maximum active current of 30mA.

Memory IC Feature Summary

• Supports multiple SPI modes including Standard, Dual, Quad, and DTR Quad I/O for flexible data transfer rates.
• Features user-selectable internal ECC that generates parity during programming and corrects errors during reading.
• Includes hardware write protection via the WP# pin and software-based block protection mechanisms.
• Provides internal data move capabilities to facilitate garbage collection without external data shifting.

Memory IC Applications

• Embedded systems requiring high-density non-volatile storage
• Boot code storage utilizing Power On Read functionality
• Industrial applications operating within extended temperature ranges

Memory IC Procurement Notes

Verify the specific ordering suffix to confirm package type and temperature grade. Ensure the system voltage aligns with the 2.7V to 3.6V requirement. Confirm interface compatibility with host controller SPI modes. Check for availability of technical documentation such as datasheets and ECAD models prior to integration.

Memory IC Selection Notes

Select this component when a cost-effective alternative to SPI-NOR or parallel NAND is required. Choose based on the need for high-speed DTR read operations or specific package constraints like the 8-WSON form factor. Consider the internal ECC feature if error correction is desired without host processing overhead.

Memory IC Part Context

This part belongs to the GD5F4GM8 series of SPI-NAND flash memories. It shares architectural similarities with other variants in the family but differs in voltage range and package options. The UEYIGY suffix specifically denotes the 3.3V operation and WSON8(8*6mm) packaging configuration.

Memory IC Replacement Considerations

GD5F4GM8UEWIGY

Memory IC FAQ

How does the internal ECC affect the spare area size?

When internal ECC is enabled, the spare area is 64 bytes. When disabled, the spare area expands to 128 bytes.

What is the function of the DQS pin?

The Data Strobe (DQS) signal indicates when output data is ready during DTR read operations. This pin is only available on the BGA24 package variant.