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GD5F4GQ6REY2GY is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLASH 4GBIT SPI/QUAD 8WSON. Review the specifications below when checking this part for your BOM.
Memory IC specifications for GD5F4GQ6REY2GY
- Description：IC FLASH 4GBIT SPI/QUAD 8WSON
- Series：GD5F
- Mfr：GigaDevice Semiconductor (HK) Limited
- Package：Tray
- Memory Type：Non-Volatile
- Memory Format：FLASH
- Technology：FLASH - NAND (SLC)
- Memory Size：4Gbit
- Memory Organization：1G x 4
- Memory Interface：SPI - Quad I/O, DTR
- Clock Frequency：80 MHz
- Write Cycle Time - Word, Page：600µs
- Voltage - Supply：1.7V ~ 2V
- Operating Temperature：-40°C ~ 105°C (TA)
- Mounting Type：Surface Mount
- Package / Case：8-WDFN Exposed Pad
- Supplier Device Package：8-WSON (6x8)
- Access Time：11 ns
- Grade：-
- Qualification：-
Memory IC datasheet and documents for GD5F4GQ6REY2GY
Memory IC Overview
The GD5F4GQ6REY2GY is a 4 Gbit SPI NAND flash memory manufactured by GigaDevice. It utilizes an 8-WSON (6x8) surface-mount package and operates within a voltage range of 1.7 V to 2 V. The device supports a Quad I/O, DTR interface with a maximum clock frequency of 80 MHz. Key electrical parameters include an access time of 11 ns and a page write cycle time of 600 µs. It features SLC technology with a memory organization of 1G x 4 bits.
Memory IC Feature Summary
- Supports high-speed Quad I/O and Double Data Rate (DTR) interfaces for efficient data transfer.
- Integrates on-chip ECC functionality to ensure data integrity in embedded applications.
- Offers a compact 8-pin WSON footprint that simplifies PCB layout and reduces system cost.
Memory IC Applications
- Embedded systems requiring reliable code storage
- IoT devices needing high-density non-volatile memory
- Industrial automation control units
Memory IC Procurement Notes
Verify the specific suffix '2GY' against the manufacturer's official datasheet to confirm the exact voltage range and temperature grade. Ensure compatibility with the target system's 1.7V-2.0V power supply rails. Confirm package dimensions match the 8-WSON (6x8) specification before finalizing the design.
Memory IC Selection Notes
Select this component when a low-voltage (1.8V class) SPI NAND solution is required. It serves as a direct alternative to higher voltage variants like the UE series if the system operates strictly within the 1.7V-2.0V window. Consider the 80 MHz DTR speed for performance requirements compared to standard QPI modes.
Memory IC Part Context
This part belongs to the GD5F family of SPI NAND flash memories from GigaDevice. The family includes both 3V and 1.8V variants, with densities ranging from 1Gb to 8Gb. The RE suffix typically denotes the 1.8V operating voltage variant, distinguishing it from the UE series which supports 3V operation.
Memory IC Replacement Considerations
GD5F4GQ6REYJGR is listed as a parameter-equivalent substitute option.
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