Memory IC GD5F4GQ6REYIGY product image

GD5F4GQ6REYIGY

$5.43
  • Description:IC FLASH 4GBIT SPI/QUAD 8WSON
  • Series:GD5F
  • Mfr:GigaDevice Semiconductor (HK) Limited
  • Package:Tray

SKU:2612bd5f2eee Category: Brand:

  
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GD5F4GQ6REYIGY is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLASH 4GBIT SPI/QUAD 8WSON. Review the specifications below when checking this part for your BOM.

Memory IC specifications for GD5F4GQ6REYIGY

  • Description:IC FLASH 4GBIT SPI/QUAD 8WSON
  • Series:GD5F
  • Mfr:GigaDevice Semiconductor (HK) Limited
  • Package:Tray
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NAND (SLC)
  • Memory Size:4Gbit
  • Memory Organization:512M x 8
  • Memory Interface:SPI - Quad I/O
  • Clock Frequency:80 MHz
  • Write Cycle Time - Word, Page:600µs
  • Voltage - Supply:1.7V ~ 2V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:8-WDFN Exposed Pad
  • Supplier Device Package:8-WSON (6x8)
  • Access Time:11 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for GD5F4GQ6REYIGY

GD5F4GQ6REYIGY

Memory IC Overview

The GD5F4GQ6REYIG is a 4Gb SLC NAND Flash memory device featuring a 2K+128B page size with an E version configuration. It supports standard, dual, quad, and DTR SPI modes with clock frequencies up to 104MHz at 3.3V or 80MHz at 1.8V. The device includes internal ECC for 4-bit/528Byte correction, an 8KB OTP region, and hardware/software write protection. It operates within voltage ranges of 1.7V–2.0V or 2.7V–3.6V, offering 100K P/E cycles and 10-year data retention in WSON8 or TFBGA packages.

Memory IC Feature Summary

  • Supports Standard, Dual, Quad, and DTR SPI interfaces for flexible data transfer rates
  • Includes user-selectable internal ECC for error correction during page operations
  • Provides hardware and software write protection mechanisms via WP# pin and registers
  • Features an 8KB One-Time Programmable (OTP) region for secure data storage

Memory IC Applications

  • Embedded systems requiring high-density non-volatile storage
  • Boot code storage utilizing power-on read functionality
  • Industrial applications demanding wide temperature range operation
  • Cost-effective alternatives to parallel NAND flash in space-constrained designs

Memory IC Procurement Notes

Verify the specific ordering suffix matches the required voltage range (1.7V-2.0V vs 2.7V-3.6V), package type (WSON8 or TFBGA), and industrial grade (-40°C to 85°C). Confirm that the 'E' designation aligns with the 2K+128B page size specification. Ensure compatibility with host controller SPI modes if DTR or Quad I/O features are utilized. Cross-reference the manufacturer's latest product list for availability and form factors.

Memory IC Selection Notes

Select this component when a 4Gb density with 2K+128B page size is required. Choose the 1.8V variant for low-power applications and the 3.3V variant for standard logic levels. Consider the WSON8 package for smaller footprints or TFBGA for higher pin density needs. Ensure the host system supports the desired SPI mode (Standard/Dual/Quad/DTR) to leverage performance benefits. Verify internal ECC requirements match the application's error tolerance.

Memory IC Part Context

This part belongs to the GD5F4GQ6xExxG family of 4Gb SPI NAND Flash memories from GigaDevice. It is designed as a cost-effective alternative to SPI-NOR and parallel NAND, offering superior write performance. The device integrates a serial NAND controller, cache memory, and status registers to manage array operations efficiently. It maintains a consistent pinout across densities within the series to simplify design upgrades.

Memory IC Replacement Considerations

Public confirmed substitute part numbers: None available in source material.

GD5F4GQ6REYIGYGD5F4GQ6REYIGY
$5.43
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