GD60MPS06H

Single Diodes Overview

The GD60MPS06H is a Silicon Carbide Schottky MPS diode manufactured by GeneSiC Semiconductor. It features a 650 V repetitive peak reverse voltage and a continuous forward current of 82 A at 100°C case temperature. The device exhibits a typical forward voltage of 1.5 V at 60 A and 25°C, with a maximum of 1.8 V at 175°C. Total capacitive charge reaches 92 nC at 400 V. Non-repetitive peak forward surge current is 420 A at 25°C for 10 ms. Junction-to-case thermal resistance is 0.42 °C/W. Operating and storage temperatures range from -55°C to +175°C.

Single Diodes Feature Summary

• Gen4 Thin Chip Technology designed to minimize forward voltage drop
• Temperature independent fast switching characteristics
• Positive temperature coefficient of forward voltage enabling easy parallel operation without thermal runaway
• High dV/dt ruggedness rated up to 200 V/ns

Single Diodes Applications

• Power Factor Correction (PFC)
• Electric Vehicles and Battery Chargers
• Solar Inverters
• Switched Mode Power Supply (SMPS)
• Motor Drives

Single Diodes Procurement Notes

Verify the specific datasheet revision against the manufacturer's official website prior to procurement. Confirm that the TO-247-2 package dimensions match the required PCB footprint layout. Ensure compliance requirements such as RoHS and REACH are documented for the specific production batch. Validate thermal management designs using the provided transient thermal impedance curves.

Single Diodes Selection Notes

Select this component for high-frequency applications requiring low switching losses and zero reverse recovery current. Evaluate system efficiency gains derived from the superior figure of merit Qrr/IF. Consider the enhanced surge current robustness for circuits subject to high inrush currents. Verify that the operating junction temperature remains within the specified -55°C to 175°C range under all load conditions.

Single Diodes Part Context

This part belongs to the SiC Schottky MPS series from GeneSiC Semiconductor. It utilizes silicon carbide technology to achieve higher performance than traditional silicon devices. The MPS structure combines the benefits of Schottky rectification with the reliability of a p-n junction. The TO-247-2 package facilitates through-hole mounting on heatsinks.

Single Diodes Replacement Considerations

Public confirmed substitute part numbers are not available in the source material.

Single Diodes FAQ

Is the GD60MPS06H avalanche tested?

Yes, the datasheet specifies that the device undergoes 100% avalanche testing.

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 420 A at a case temperature of 25°C for a duration of 10 ms.

Does the device exhibit reverse recovery current?

No, the device features zero reverse recovery current due to its Schottky MPS structure.