GD9FS1G8F3AMGI

$2.24

Description：IC MEMORY
Series：-
Mfr：GigaDevice Semiconductor (HK) Limited
Package：Tray

SKU:f78cb60aaa18 Category: Memory IC Brand: GigaDevice Semiconductor (HK) Limited

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Product introduction

GD9FS1G8F3AMGI is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC MEMORY. Review the specifications below when checking this part for your BOM.

Memory IC specifications for GD9FS1G8F3AMGI

Description：IC MEMORY
Series：-
Mfr：GigaDevice Semiconductor (HK) Limited
Package：Tray
Memory Type：-
Memory Format：-
Technology：-
Memory Size：-
Memory Organization：-
Memory Interface：-
Clock Frequency：-
Write Cycle Time - Word, Page：-
Voltage - Supply：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Access Time：-
Grade：-
Qualification：-

Memory IC datasheet and documents for GD9FS1G8F3AMGI

GD9FS1G8F3AMGI

Memory IC Overview

The GD9FS1G8F3AMGI is a 1 Gbit NAND Flash memory integrated circuit manufactured by GigaDevice. It features an 8-bit data bus width and a storage organization of 128M x 8. The device operates within a supply voltage range of 1.7 V to 1.95 V, with a maximum active read current of 30 mA. It supports an industrial temperature range from -40°C to +85°C and utilizes a 48-TSOP (0.173", 4.40mm wide) surface-mount package.

Memory IC Feature Summary

Non-volatile NAND flash storage technology for persistent data retention
Parallel interface architecture supporting high-speed data transfer
Industrial-grade operational reliability across extended temperature ranges

Memory IC Applications

Industrial control systems requiring robust non-volatile storage
Embedded applications demanding high-density data retention
Consumer electronics utilizing parallel NAND interfaces

Memory IC Procurement Notes

Verify the specific suffix 'F3' against official datasheets to confirm interface and speed variants, as packaging or electrical characteristics may differ from similar part numbers. Ensure compatibility with system voltage levels and thermal requirements before integration. Cross-reference manufacturer documentation for any recent product lifecycle updates or recommended replacements.

Memory IC Selection Notes

Select this component when a parallel NAND interface is required for 1 Gbit capacity in industrial environments. Consider the 48-TSOP package constraints for PCB layout and the 1.8V power domain requirements. Evaluate the 8-bit bus width against system bandwidth needs and ensure the operating temperature range aligns with the target application's environmental conditions.

Memory IC Part Context

This part belongs to the GD9FS1G8 series of NAND flash memories from GigaDevice. It represents a high-density storage solution designed for applications needing reliable data retention. The series offers various package options and interface configurations to suit different design constraints while maintaining consistent core performance metrics.