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GD9FS4G8F2ALGJ is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC MEMORY. Review the specifications below when checking this part for your BOM.
The GD9FS4G8F2ALGJ is a NAND flash memory component manufactured by GigaDevice. It features a storage capacity of 4 Gbit and utilizes a parallel interface with asynchronous timing. The device operates within a power supply voltage range of 1.7 V to 1.95 V, with a maximum active read current of 30 mA. It is housed in an FBGA-63 package suitable for surface mount technology (SMD/SMT). The memory organization is specified as 128 M x 8 with an 8-bit data bus width. The component supports an industrial operating temperature range from -40°C to +85°C.
Verify the specific suffix designation against official manufacturer documentation, as variations such as ALGI or ALGJ may indicate differences in packaging, regional distribution, or manufacturing lot specifications. Confirm availability status through authorized distributors, as stock levels fluctuate. Ensure compliance with RoHS directives and functional safety certifications relevant to the target application environment before finalizing procurement decisions.
Select this component when a 4 Gbit parallel NAND flash solution is required for mobile or IoT applications. Consider the 1.7 V to 1.95 V operating voltage range for compatibility with low-power system designs. The FBGA-63 package offers a compact form factor suitable for space-constrained PCB layouts. Verify that the host controller supports the necessary parallel interface protocols and asynchronous timing requirements for seamless integration.
This part belongs to the GD9FS series of NAND flash memories from GigaDevice, targeting mobile and consumer electronics markets. The series emphasizes low power consumption and high performance for smartphones and tablets. GigaDevice is a leading fabless semiconductor company specializing in Flash memory, MCUs, and sensors, with a global presence and extensive patent portfolio supporting its product lines.
The GD9FU4G8F3ALGJ is a related 4 Gbit NAND flash variant within the same family, though it operates at a higher voltage range (2.7 V to 3.6 V) and uses a different interface configuration. Direct substitution requires verification of voltage compatibility and interface signaling levels between the host system and the replacement component.
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