Memory IC GD9FU1G8F2DLGI product image

GD9FU1G8F2DLGI

$2.07
  • Description:IC FLASH 1GBIT PAR 63FBGA
  • Series:GD9F
  • Mfr:GigaDevice Semiconductor (HK) Limited
  • Package:Tray

SKU:f495e70b992c Category: Brand:

  
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GD9FU1G8F2DLGI is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLASH 1GBIT PAR 63FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for GD9FU1G8F2DLGI

  • Description:IC FLASH 1GBIT PAR 63FBGA
  • Series:GD9F
  • Mfr:GigaDevice Semiconductor (HK) Limited
  • Package:Tray
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NAND (SLC)
  • Memory Size:1Gbit
  • Memory Organization:128M x 8
  • Memory Interface:ONFI
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:12ns, 600µs
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:63-VFBGA
  • Supplier Device Package:63-FBGA (9x11)
  • Access Time:9 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for GD9FU1G8F2DLGI

GD9FU1G8F2DLGI

Memory IC Overview

The GD9FU1G8F2DLGI is a 1 Gbit NAND flash memory device manufactured by GigaDevice. It features an asynchronous parallel interface with an 8-bit data bus width and a storage organization of 128 M x 8. The component operates within a voltage range of 2.7 V to 3.6 V and supports an active read current of up to 30 mA. It is housed in a 63-ball FBGA package designed for surface mount technology. The device functions reliably across an industrial temperature range from -40°C to +85°C.

Memory IC Feature Summary

  • Supports high-capacity non-volatile data storage using SLC NAND technology.

Memory IC Applications

  • Mobile devices requiring embedded storage solutions.

Memory IC Procurement Notes

Verify the specific ordering suffix against official datasheets to confirm package type and electrical characteristics, as variations exist within the GD9F series. Confirm RoHS compliance status through manufacturer documentation before integration. Ensure supply chain availability checks are performed due to potential distribution restrictions or limited stock conditions reported by major distributors.

Memory IC Selection Notes

Select this component when a parallel interface is required for system compatibility. The 1 Gbit capacity suits applications needing moderate storage density. Verify that the PCB layout supports the 63-FBGA footprint and that the host controller provides the necessary asynchronous timing signals. Ensure power supply rails match the specified 2.7 V to 3.6 V operating range.

Memory IC Part Context

This part belongs to the GD9F series of parallel NAND flash memories from GigaDevice. The series is characterized by high-density storage options and asynchronous parallel interfaces suitable for various embedded systems. Other variants in the family may differ in package size, such as TSOP, or voltage specifications, but share similar core memory technologies and organizational structures.

Memory IC Replacement Considerations

Check for other GD9FU1G8 variants with different suffixes if package dimensions must change. Cross-reference with GD9FS1G8 models for potential pin-compatible alternatives if voltage requirements differ. Always validate electrical parameters and timing specifications against the new candidate's datasheet.

GD9FU1G8F2DLGIGD9FU1G8F2DLGI
$2.07
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