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GD9FU2G8F2ALGI is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLASH 2GBIT ONFI. Review the specifications below when checking this part for your BOM.
Memory IC specifications for GD9FU2G8F2ALGI
- Description：IC FLASH 2GBIT ONFI
- Series：GD9F
- Mfr：GigaDevice Semiconductor (HK) Limited
- Package：Tray
- Memory Type：Non-Volatile
- Memory Format：FLASH
- Technology：FLASH - NAND (SLC)
- Memory Size：2Gbit
- Memory Organization：256M x 8
- Memory Interface：ONFI
- Clock Frequency：-
- Write Cycle Time - Word, Page：20ns
- Voltage - Supply：2.7V ~ 3.6V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：63-VFBGA
- Supplier Device Package：63-FBGA (9x11)
- Access Time：18 ns
- Grade：-
- Qualification：-
Memory IC datasheet and documents for GD9FU2G8F2ALGI
Memory IC Overview
The GD9FU2G8F2ALGI is a 2 Gbit parallel NAND flash memory device manufactured by GigaDevice. It features an organization of 128M x 8 bits and operates within a voltage range of 2.7 V to 3.6 V. The component supports a maximum supply current of 30 mA and functions reliably across an industrial temperature range from -40°C to +85°C. It utilizes a 63-pin FBGA package for surface mount installation.
Memory IC Feature Summary
- Supports high-capacity non-volatile data storage with parallel interface connectivity
- Designed for industrial-grade operational reliability across extended temperature ranges
- Integrates standard ONFI-compliant parallel NAND architecture
Memory IC Applications
- Industrial control systems requiring robust data logging
- Automotive embedded storage solutions
- Consumer electronics firmware retention
- IoT device application code storage
Memory IC Procurement Notes
Verify the specific suffix 'LGI' against official datasheets to confirm lead-free status and RoHS compliance. Ensure the operating voltage aligns with the 2.7V to 3.6V specification. Confirm thermal management capabilities for the -40°C to +85°C range in final assembly designs.
Memory IC Selection Notes
Select this component when a 2 Gbit capacity is required with parallel interface constraints. Compare against the GD9FS series if lower voltage operation (1.7V-1.95V) is necessary instead of the standard 3.3V domain. Verify package compatibility with the 63-FBGA footprint during PCB layout.
Memory IC Part Context
This part belongs to the GD9FU series, which targets high-density parallel NAND applications. It complements the GD9FS series by offering higher voltage tolerance. The family emphasizes cost-effective storage for mass-market electronic devices requiring reliable non-volatile memory.
Memory IC Replacement Considerations
GD9FU2G8F2AMGI offers identical electrical specifications but utilizes a 48-TSOP package instead of FBGA. Cross-reference pinouts carefully as physical footprints differ significantly between these package types.
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