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GD9FU4G8F4DLGI is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLASH. Review the specifications below when checking this part for your BOM.
Memory IC specifications for GD9FU4G8F4DLGI
- Description：IC FLASH
- Series：-
- Mfr：GigaDevice Semiconductor (HK) Limited
- Package：Tray
- Memory Type：-
- Memory Format：FLASH
- Technology：FLASH - NAND
- Memory Size：-
- Memory Organization：-
- Memory Interface：-
- Clock Frequency：-
- Write Cycle Time - Word, Page：-
- Voltage - Supply：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Access Time：-
- Grade：-
- Qualification：-
Memory IC datasheet and documents for GD9FU4G8F4DLGI
Memory IC Overview
The GD9FU4G8F4DLGI is a 4 Gbit NAND flash memory IC manufactured by GigaDevice. It features an asynchronous parallel interface with an 8-bit data bus width and an organization of 128 M x 8. The device operates within a voltage range of 2.7 V to 3.6 V, with a maximum active read current of 30 mA. It is housed in an FBGA-63 package suitable for surface mount technology. The component supports an industrial temperature range from -40°C to +85°C.
Memory IC Feature Summary
- Asynchronous parallel interface architecture
- High-density 4 Gbit storage capacity
- Industrial-grade wide temperature operation
Memory IC Applications
- Mobile devices and smartphones
- Camera modules
- Touch controllers
- Fingerprint sensors
- AMOLED displays
Memory IC Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct voltage and package specifications. Confirm RoHS compliance status through the provided documentation. Check current availability as supply may be restricted or limited in certain regions. Ensure the selected variant matches the required system voltage and interface timing constraints before procurement.
Memory IC Selection Notes
Select this component when a parallel NAND interface is required for high-density storage in mobile applications. The 4 Gbit capacity suits systems needing substantial non-volatile memory within a compact footprint. Verify that the host controller supports the asynchronous parallel protocol and the 128 M x 8 organization. Ensure the design accommodates the 2.7 V to 3.6 V power supply requirements and the FBGA-63 package dimensions.
Memory IC Part Context
This part belongs to the GD9FU4GxF4 series of NAND flash memories designed for mobile solutions. GigaDevice offers this portfolio to support smartphones and mobile devices, focusing on optimizing power consumption and extending battery life. The series provides flexible options for camera modules, touch controllers, and display drivers, enabling reliable and efficient device designs.
Memory IC Replacement Considerations
Check for other parts within the GD9FU4Gx family with compatible pinouts and electrical characteristics. Verify if alternative packages or voltage variants are available from the same manufacturer. Ensure any substitute maintains the parallel interface and 4 Gbit density requirements.
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