GD9FU8G8E2AMGI

$12.16

Description：IC FLASH 8GBIT ONFI 48TSOPI
Series：GD9F
Mfr：GigaDevice Semiconductor (HK) Limited
Package：Tray

SKU:14c6b21ea906 Category: Memory IC Brand: GigaDevice Semiconductor (HK) Limited

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Product introduction

GD9FU8G8E2AMGI is listed in the Memory IC range at ChipApex. The manufacturer field lists GigaDevice Semiconductor (HK) Limited. Its product description is IC FLASH 8GBIT ONFI 48TSOPI. Review the specifications below when checking this part for your BOM.

Memory IC specifications for GD9FU8G8E2AMGI

Description：IC FLASH 8GBIT ONFI 48TSOPI
Series：GD9F
Mfr：GigaDevice Semiconductor (HK) Limited
Package：Tray
Memory Type：Non-Volatile
Memory Format：FLASH
Technology：FLASH - NAND (SLC)
Memory Size：8Gbit
Memory Organization：1G x 8
Memory Interface：ONFI
Clock Frequency：-
Write Cycle Time - Word, Page：20ns
Voltage - Supply：2.7V ~ 3.6V
Operating Temperature：-40°C ~ 85°C (TA)
Mounting Type：Surface Mount
Package / Case：48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package：48-TSOP I
Access Time：18 ns
Grade：-
Qualification：-

Memory IC datasheet and documents for GD9FU8G8E2AMGI

GD9FU8G8E2AMGI

Memory IC Overview

The GD9FU8G8E2AMGI is a NAND flash memory IC manufactured by GigaDevice. It provides a storage capacity of 1Gb, organized as 128M x 8 bits. The device operates within a supply voltage range of 2.7V to 3.6V and supports an access time of 18 ns. It is housed in a 48-TSOP I package with dimensions of 0.173 inches (4.40mm) width. The component is rated for an operating temperature range of -40°C to +85°C and meets RoHS3 compliance standards.

Memory IC Feature Summary

Non-volatile NAND flash technology for reliable data retention
High-speed parallel interface supporting 18 ns access times
Wide operating voltage range from 2.7V to 3.6V
Industrial temperature rating for extended environmental stability

Memory IC Applications

Embedded code storage systems
Consumer electronics devices
Industrial control applications
IoT hardware modules

Memory IC Procurement Notes

Verify the specific suffix E2AMGI against official datasheets to confirm pinout and electrical characteristics. Ensure compatibility with existing PCB layouts requiring 48-TSOP packages. Confirm that the 2.7V-3.6V supply range aligns with system power rails. Check for RoHS3 compliance requirements if exporting to regulated regions. Validate lead times as availability may fluctuate due to market conditions.

Memory IC Selection Notes

Select this part when a 1Gb density is required in a TSOP form factor. Consider the 18 ns access speed for performance needs. Verify voltage compatibility with the 2.7V-3.6V operational window. Evaluate thermal constraints for the -40°C to +85°C industrial range. Compare against SPI NAND options if serial interfaces are preferred for space savings.

Memory IC Part Context

This component belongs to the GD9F series of parallel NAND flash memories from GigaDevice. The series targets embedded applications requiring high-density storage. It complements the company's SPI NOR and SPI NAND portfolios. The GD9F line emphasizes reliability and cost-effectiveness for mass-market electronic designs.

Memory IC Replacement Considerations

Check for GD9FU8G8 variants with different suffixes for package or temperature changes. Verify cross-compatibility with other 1Gb parallel NAND parts from alternative manufacturers. Ensure pin-to-pin matching for direct replacement without schematic modifications.