GHXS050B170S-D3

GHXS050B170S-D3

$32.38
  • Description:1700V, 50A SIC DUAL DIODE MODULE
  • Series:QSiC™

SKU:bf53616b7a06 Category: Brand:

  
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Product Detailed Parameters

  • Description:1700V, 50A SIC DUAL DIODE MODULE
  • Series:QSiC™
  • Mfr:SemiQ
  • Package:Tube
  • Diode Configuration:2 Independent
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):1700 V
  • Current - Average Rectified (Io) (per Diode):110A
  • Voltage - Forward (Vf) (Max) @ If:1.65 V @ 50 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:200 µA @ 1.7 kV
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227
  • Grade:-
  • Qualification:-

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GHXS050B170S-D3

Overview

The GHXS050B170S-D3 is a Silicon Carbide (SiC) Schottky diode module manufactured by SemiQ. It features a reverse voltage rating of 1.7 kV and a continuous forward current capacity of 50 A. The device utilizes a SOT-227-4 package with screw mount installation style. Key electrical parameters include a maximum forward voltage of 2.3 V at rated conditions and a power dissipation capability of 882 W. The operational temperature range spans from -55°C to +175°C junction temperature.

Feature Summary

  • Utilizes Silicon Carbide (SiC) technology for high-temperature operation
  • Schottky diode configuration minimizes switching losses
  • Robust mechanical design suitable for screw mounting applications

Applications

  • High-frequency power conversion systems
  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • Solar inverters

Procurement Notes

Verify the specific part number suffix against official manufacturer documentation to ensure correct pinout and thermal characteristics. Confirm RoHS compliance status through the latest datasheet revision. Cross-reference the SOT-227-4 package dimensions with your PCB or heatsink design requirements prior to procurement to ensure mechanical compatibility.

Selection Notes

Select this component when a 1.7 kV blocking voltage and 50 A continuous current are required in a compact module form factor. Consider the SiC material properties for efficiency gains over silicon alternatives in high-temperature environments. Ensure the cooling solution can handle the specified 882 W power dissipation under worst-case operating conditions.

Part Context

This module belongs to SemiQ's portfolio of discrete semiconductor power modules. It is designed for demanding power electronics applications requiring high reliability and efficiency. The product line emphasizes robust packaging and advanced semiconductor materials to meet modern industrial standards.

Replacement Considerations

Consult official substitution guides for equivalent SiC Schottky diodes with matching 1.7 kV and 50 A ratings. Verify pin compatibility and thermal resistance values before replacing existing designs with alternative manufacturers' components.

GHXS050B170S-D3GHXS050B170S-D3
$32.38
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