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Product Detailed Parameters
- Description：DIODE MOD SIC 650V 193A SOT-227
- Series：-
- Mfr：SemiQ
- Package：Tube
- Diode Configuration：2 Independent
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io) (per Diode)：193A (DC)
- Voltage - Forward (Vf) (Max) @ If：1.65 V @ 100 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：250 µA @ 650 V
- Operating Temperature - Junction：-55°C ~ 175°C
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227
- Grade：-
- Qualification：-
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Overview
The GHXS100B065S-D3 is a Silicon Carbide Schottky Barrier Diode module manufactured by SemiQ. It features a 650 V reverse voltage rating and a continuous forward current capacity of 100 A. The device exhibits a typical forward voltage drop of 1.77 V at rated conditions. It operates within a junction temperature range of -55°C to +175°C. The component utilizes screw mount installation and is housed in an SOT-227-4 package.
Feature Summary
- Utilizes Silicon Carbide (SiC) technology for high-temperature operation
- Schottky barrier construction minimizes switching losses
- Designed for robust thermal management in power applications
Applications
- High-efficiency DC-DC converters
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Solar inverters
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributor before procurement. Confirm that the SOT-227-4 package dimensions match the intended PCB footprint and thermal interface requirements. Ensure the screw mounting torque specifications are adhered to during assembly to maintain electrical integrity and thermal performance over the operational lifetime.
Selection Notes
Select this component when a 650 V SiC diode with 100 A current handling is required. The low forward voltage contributes to reduced conduction losses compared to silicon alternatives. Consider the wide operating temperature range for harsh environments. Verify compatibility with existing gate drive and snubber circuits designed for fast-switching devices.
Part Context
This module belongs to the GHXS series from SemiQ, which focuses on high-power SiC solutions. The series offers various voltage ratings and current capacities to suit different power levels. The GHXS100B065S-D3 specifically targets applications requiring high efficiency and reliability in medium-to-high power conversion systems.
Replacement Considerations
Check for direct pin-compatible substitutes within the GHXS family or other manufacturers offering equivalent 650V/100A SiC modules. Ensure thermal resistance and package dimensions match if swapping brands. Verify that the replacement part meets the same safety and regulatory certifications.
