GHXS100B120S-D3

Overview

The GHXS100B120S-D3 is a Silicon Carbide Schottky Diode Module from the SemiQ GHXS series. It features a 1200V reverse voltage rating and a 100A forward current capacity. The device utilizes SiC technology for high-temperature operation, with a maximum junction temperature of +175°C and a minimum of -55°C. It is housed in an SOT-227-4 package designed for screw mounting. This module is part of a product line that emphasizes minimized package parasitics and enhanced performance through advanced SiC chip sets.

Feature Summary

• Utilizes Silicon Carbide (SiC) technology for superior thermal and electrical performance compared to traditional silicon devices.
• Features a dual diode pack configuration within a single SOT-227-4 package to minimize parasitic inductance.
• Designed for high-temperature applications with a maximum operating junction temperature of +175°C.

Applications

• High-power industrial motor drives
• Uninterruptible power supplies (UPS)
• Solar inverters and renewable energy systems

Procurement Notes

Verify the specific suffix '-D3' against the manufacturer's latest datasheet to confirm pinout and mechanical dimensions, as packaging variations may exist within the GHXS family. Ensure the supplier provides official documentation confirming the 1200V/100A ratings and SOT-227-4 form factor. Cross-reference the part number with authorized distributors to avoid counterfeit components, particularly for high-reliability power electronics applications.

Selection Notes

Select this component when designing circuits requiring high efficiency at elevated temperatures or high switching frequencies where SiC advantages are critical. The 1200V rating provides sufficient headroom for 600V or 800V bus systems. Consider the SOT-227-4 package size for PCB layout constraints and the need for screw-mounting hardware. Compare thermal resistance values against other modules in the GHXS series if higher current density is required.

Part Context

This module belongs to the SemiQ GHXS series of SiC Schottky Diode Modules. The series includes variants with different current ratings such as the GHXS300A120S7D5 (300A) and GHXS100B065S-D3 (650V). The GHXS100B120S-D3 specifically targets the 100A, 1200V segment, offering a balance between current handling capability and voltage blocking strength for medium-to-high power conversion stages.

Replacement Considerations

Direct substitutes within the same family include the GHXS100B065S-D3 for lower voltage applications (650V). For higher current needs, the GHXS300A120S7D5 is available but requires different thermal management. No cross-manufacturer direct replacements are confirmed in public data; design-in alternatives require careful evaluation of thermal and electrical parameters.