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The GN1035CWA-CHIP is a fully integrated silicon germanium transimpedance amplifier designed for wideband, low-noise pre-amplification of signal currents from photodetectors. It features differential outputs and an automatic gain control mechanism to increase dynamic range, accommodating input signals up to 2.6 mA peak. The device operates on a single +3.3V power supply with typical power dissipation of 125mW. Key electrical parameters include an input noise current of 250nA rms (with a 0.5pF detector), a transimpedance gain of 10kΩ into a 100Ω differential load, and a -3dB bandwidth of 2.0GHz. It includes an on-chip filter to improve sensitivity and control bandwidth.
Verify the specific ordering code GN1035CWA-CHIP corresponds to the bare die package configuration as listed in official Semtech documentation. Confirm that the application environment supports the required single +3.3V supply and that external circuitry is limited to a supply decoupling capacitor. Ensure compatibility with the specified photodetector capacitance for accurate noise performance metrics.
Select this component for applications requiring a 2.5Gb/s data rate with high dynamic range capabilities. The 10kΩ transimpedance gain and 2.0GHz bandwidth are suitable for GPON and Gigabit Ethernet interfaces. Consider the bare die format for custom packaging solutions where pin-out flexibility via bondpad configuration is required.
The GN1035 is part of Gennum's portfolio of silicon germanium transimpedance amplifiers, now under Semtech Corporation. It is designed to provide low-noise pre-amplification for optical receivers, featuring integrated automatic gain control and differential outputs to support high-speed data transmission standards.
Public confirmed substitute part numbers are not available in the provided source material.
The GN1035 incorporates an automatic gain control mechanism that allows it to handle input signals up to 2.6 mA peak.
No, a photodiode bypass capacitor is not required in PIN-based applications when using the GN1035.