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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The GN1058CW-CHIP is a fully integrated silicon germanium (SiGe) BiCMOS transimpedance amplifier designed for wideband, low noise pre-amplification of current signals from PIN photodiodes or APDs. It features differential outputs and incorporates automatic gain control to improve linear dynamic range. The device operates on a single +3.3V power supply with typical power dissipation of 190mW. It provides a typical small signal gain of 4kΩ into a 100Ω load and maintains constant bandwidth over its dynamic range. The component supports NRZ data rates from 9.95Gbps to 11.3Gbps and includes user-adjustable RSSI functionality.
Verify the specific ordering code GN1055CW-CHIP against the requested model GN1058CW-CHIP, as source documentation lists the former under the GN1055 identifier while describing GN1058 specifications. Confirm package type and RoHS compliance status directly with the manufacturer or authorized distributor before procurement to ensure alignment with design requirements.
Select this component for designs requiring high-gain amplification with automatic gain control capabilities. It is suitable for applications demanding operation within the 9.95Gbps to 11.3Gbps NRZ rate range. Consider its compatibility with PIN photodiodes and APDs when designing the receive path for SFP+ form factors.
This component belongs to Semtech's portfolio of optical transceiver ICs and components. It falls under the category of Transimpedance Amplifiers (TIAs), which are critical for converting photocurrent into voltage in optical communication systems. The product line supports various standards including Ethernet and Fibre Channel.
No public confirmed substitute part numbers are available in the provided documentation.