GN7068-CHIP

Overview

The GN7068-CHIP is an extended-capability transimpedance amplifier die designed for use with a 10G APD. It features a typical power dissipation of 94mW and a typical transimpedance gain of 3.25kΩ. The device offers a bandwidth of 12GHz (-3dB) and operates at NRZ rates up to 14.5Gbps, including OC-192/STM-64. It supports a working junction temperature range from -40°C to +125°C.

Feature Summary

• Designed for optimized RF matching between photodiode and TIA
• Includes on-chip VCC decoupling for stability
• Supports high-speed NRZ data rates

Applications

• PON applications
• Optical modules requiring 10G APD integration

Procurement Notes

Verify the specific suffix or variant against official Semtech documentation to ensure compatibility with your optical design requirements. Confirm that the bare die form factor aligns with your packaging capabilities and thermal management strategy before procurement.

Selection Notes

Select this component when integrating a 10G APD into a compact optical module design. Its low power consumption and high bandwidth make it suitable for high-density deployments where thermal efficiency and signal integrity are critical constraints.

Part Context

This component belongs to Semtech's signal integrity portfolio, specifically targeting passive optical network (PON) infrastructure. It complements other optical interface solutions by providing essential analog front-end amplification for high-speed data reception in fiber optic systems.

Replacement Considerations

No verified substitute part numbers are available in public documentation.