GP2D003A065A

Overview

The SemiQ GP2D003A065A is a silicon carbide (SiC) Schottky diode designed for high-efficiency power conversion. It features a maximum DC reverse voltage of 650 V and an average forward current rating of 3 A in a TO-220-2 through-hole package. The device exhibits zero reverse recovery time, minimizing switching losses. Forward voltage is specified at 1.65 V when conducting 3 A. Reverse leakage current is limited to 30 µA at the maximum rated voltage. Junction capacitance measures 158 pF at 1 V and 1 MHz. The component operates within a junction temperature range of -55°C to +175°C.

Feature Summary

• Utilizes silicon carbide technology for superior thermal performance and high-temperature operation up to 175°C junction temperature.
• Features zero reverse recovery time characteristic, eliminating reverse recovery charge and associated switching losses during commutation.
• Constructed with a robust TO-220-2 through-hole package suitable for reliable mounting in industrial power applications.

Applications

• High-frequency switch-mode power supplies
• Uninterruptible power supply (UPS) systems
• Industrial motor drives and inverters

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number with official SemiQ documentation. Confirm that the received unit matches the TO-220-2 package style and SiC material specification. Check for physical damage to leads and ensure the marking on the casing aligns with the GP2D003A065A designation before integration into circuit designs.

Selection Notes

Select this component for circuits requiring fast switching speeds and low conduction losses at moderate currents. The 650 V rating provides sufficient headroom for standard 400 V AC input systems. Ensure the thermal management design accommodates the 1.65 V forward drop at 3 A to maintain junction temperatures within the specified -55°C to +175°C operational range.

Part Context

This device belongs to the Amp+™ series of silicon carbide Schottky rectifiers from SemiQ. It is engineered to replace traditional silicon fast recovery diodes in applications demanding higher efficiency and reduced electromagnetic interference. The through-hole configuration supports automated insertion processes common in legacy and industrial manufacturing lines.

Replacement Considerations

No publicly confirmed substitute part numbers are available in the provided documentation. Verify compatibility with existing footprints if considering alternative manufacturers, ensuring voltage, current, and package dimensions match the original specifications.