GP2D006A065C

Overview

The GP2D006A065C is a 650 V Silicon Carbide Schottky diode from the Amp+ series, housed in a TO-252-2L (DPAK) package. It supports a continuous forward current of up to 18 A at 25 °C and features zero reverse recovery time with a typical charge of 14 nC. The device operates within a junction temperature range of -55 °C to 175 °C, offering high dv/dt ruggedness of 50 V/ns and low thermal resistance.

Feature Summary

• Zero reverse recovery current enabling fast, temperature-independent switching
• High surge current capability for robust performance under transient conditions
• Unipolar rectifier design ensuring zero switching loss and higher efficiency

Applications

• Motor drives
• Switch mode power supplies
• Power factor correction

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and REACh SVHC declarations prior to integration. Ensure ordering suffixes match specific packaging requirements. Validate datasheet revision against production lot markings to guarantee parameter consistency.

Selection Notes

Select this component for applications requiring high-frequency operation and minimal switching losses. Evaluate thermal derating curves to ensure junction temperatures remain within the 175 °C limit during peak loads. Consider the TO-252-2L package constraints for PCB layout and heat dissipation strategies relative to the specified thermal resistance.

Part Context

This part belongs to the Amp+ family of Silicon Carbide Schottky diodes manufactured by Global Power Technologies Group. The series emphasizes high bandwidth and parallel device stability. The GP2D006A065C variant specifically targets compact power designs utilizing the DPAK form factor for efficient space utilization.

Replacement Considerations

No public confirmed substitute part numbers are documented.