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Product Detailed Parameters
- Description：DIODE SIL CARB 1200V 10A TO220
- Series：Amp+™
- Mfr：SemiQ
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io)：10A
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 10 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：20 µA @ 1200 V
- Capacitance @ Vr, F：635pF @ 1V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-220-2
- Supplier Device Package：TO-220-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The GP2D010A120A is a 1200V Silicon Carbide (SiC) Schottky Diode from the Amp+ series, manufactured by SemiQ. It utilizes a TO-220-2L package and supports continuous forward currents up to 33A at 25°C case temperature. Key electrical parameters include a maximum repetitive peak reverse voltage of 1200V, a typical total capacitive charge of 43nC, and a junction-to-case thermal resistance of 0.80°C/W. The device operates within a temperature range of -55°C to +175°C.
Feature Summary
- Zero reverse recovery current for lossless switching
- High surge current capability with robust dv/dt ruggedness
- Temperature-independent switching characteristics
- Unipolar rectifier design ensuring high bandwidth
Applications
- Motor drives
- Switch mode power supplies
- Power factor correction
Procurement Notes
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure proper mounting torque specifications are met during installation to maintain thermal performance and mechanical integrity. Review datasheet revisions for any updates to electrical limits or packaging details before finalizing procurement orders.
Selection Notes
Select this component for applications requiring fast, temperature-independent switching and zero reverse recovery losses. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance and power derating curves. Consider the TO-220-2L package constraints for board layout and heat dissipation strategies in high-frequency power conversion environments.
Part Context
This part belongs to the Amp+ series of Silicon Carbide Schottky Diodes designed for high-efficiency power electronics. It represents a unipolar rectifier solution offering higher efficiency and reduced heat sink size compared to traditional silicon alternatives. The series targets industrial and automotive power conversion systems demanding reliability under extreme thermal conditions.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum repetitive peak reverse voltage rating?
The maximum repetitive peak reverse voltage (VRRM) is rated at 1200V.
Does this diode exhibit reverse recovery charge?
No, the GP2D010A120A features zero reverse recovery current, resulting in negligible switching losses.
