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Product Detailed Parameters
- Description：DIODE SIL CARB 1200V 10A TO2472
- Series：Amp+™
- Mfr：SemiQ
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io)：10A
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 10 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：20 µA @ 1200 V
- Capacitance @ Vr, F：635pF @ 1V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-247-2
- Supplier Device Package：TO-247-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The GP2D010A120B is a 1200 V Silicon Carbide Schottky diode from the Amp+ series, packaged in TO-247-2L. It supports a continuous forward current of up to 33 A at 25 °C and handles surge currents up to 80 A. The device features a maximum reverse leakage current of 635 µA at 175 °C and a total capacitive charge of 43 nC. Thermal resistance from junction to case is 0.80 °C/W, with an operating temperature range spanning -55 °C to 175 °C.
Feature Summary
- Zero reverse recovery current for fast, temperature-independent switching
- High surge current capability with parallel device thermal stability
- Unipolar rectifier design eliminating switching loss
Applications
- Motor drives
- Switch mode power supplies
- Power factor correction
Procurement Notes
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure mounting torque specifications are strictly adhered to during installation to maintain thermal performance and mechanical integrity.
Selection Notes
Select this component for high-frequency applications requiring zero reverse recovery characteristics. Evaluate thermal derating curves against expected ambient conditions to ensure junction temperatures remain within safe limits. Consider the low forward voltage drop for improved system efficiency compared to traditional silicon alternatives.
Part Context
This part belongs to the Amp+ series of Silicon Carbide Schottky diodes manufactured by Global Power Technologies Group Inc. The series emphasizes high bandwidth and unipolar operation, designed to replace standard silicon rectifiers in demanding power electronics environments where speed and thermal robustness are critical.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum dv/dt rating for this diode?
The repetitive turn-on slew rate (dv/dt) ruggedness is rated at 50 V/ns.
Does this component exhibit reverse recovery charge?
No, the device features zero reverse recovery current and negligible recovery charge due to its Schottky barrier construction.
