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Product Detailed Parameters
- Description：DIODE SIL CARB 1700V 39A TO2472
- Series：Amp+™
- Mfr：SemiQ
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1700 V
- Current - Average Rectified (Io)：39A
- Voltage - Forward (Vf) (Max) @ If：1.65 V @ 10 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：40 µA @ 1700 V
- Capacitance @ Vr, F：699pF @ 1V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-247-2
- Supplier Device Package：TO-247-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The SemiQ GP3D010A170B is a Silicon Carbide (SiC) Schottky diode rated for 1700 V reverse voltage and 10 A forward current. It utilizes the TO-247-2 through-hole package, offering a maximum power dissipation of 249 W. The device features zero reverse recovery time and a typical forward voltage of 1.53 V at 10 A. Operating within a junction temperature range of -55°C to 175°C, it exhibits low leakage current of 40 µA at full reverse voltage.
Feature Summary
- Zero reverse recovery time eliminates switching losses associated with minority carrier storage.
- Silicon Carbide construction enables high thermal stability and efficient heat dissipation.
- Schottky barrier technology ensures fast switching speeds and reduced electromagnetic interference.
Applications
- High-frequency power conversion circuits
- Solar inverter systems
- Induction heating equipment
Procurement Notes
Verify the specific suffix 'A' in the part number GP3D010A170B against official datasheets to confirm pinout and electrical tolerances. Ensure the procurement channel provides original manufacturer documentation. Confirm RoHS compliance status if required by local regulations. Check for any recent Product Change Notifications regarding packaging or material updates.
Selection Notes
Select this component when designing circuits requiring high blocking voltage and minimal reverse recovery charge. The TO-247-2 package facilitates effective thermal management for moderate power levels. Consider the 1700 V rating for safety margins in high-voltage DC links. Evaluate the 10 A continuous current capability against peak load requirements.
Part Context
This diode belongs to the SemiQ Amp+ series of silicon carbide devices. It is designed for high-efficiency power electronics applications where traditional silicon diodes suffer from high switching losses. The product line emphasizes reliability and performance in demanding industrial environments.
Replacement Considerations
The GP3D020A170B is a confirmed direct replacement option with higher current capacity. Verify pin compatibility and thermal resistance differences before substitution. Ensure the alternative part meets all voltage and temperature specifications of the original design.
FAQ
What is the reverse recovery time of the GP3D010A170B?
The device has a zero reverse recovery time due to its Schottky barrier construction.
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175°C.
